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M29DW128G60NF6F PDF预览

M29DW128G60NF6F

更新时间: 2024-10-26 20:52:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路闪存
页数 文件大小 规格书
85页 736K
描述
IC,EEPROM,NOR FLASH,8MX16,CMOS,TSSOP,56PIN,PLASTIC

M29DW128G60NF6F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.78
Is Samacsys:N最长访问时间:60 ns
启动块:BOTTOM/TOP命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PDSO-G56内存密度:134217728 bit
内存集成电路类型:FLASH内存宽度:16
部门数/规模:8,62端子数量:56
字数:8388608 words字数代码:8000000
最高工作温度:85 °C最低工作温度:-40 °C
组织:8MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP56,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
页面大小:8 words并行/串行:PARALLEL
电源:3/3.3 V认证状态:Not Qualified
就绪/忙碌:YES部门规模:32K,128K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.015 mA表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:YES
类型:NOR TYPEBase Number Matches:1

M29DW128G60NF6F 数据手册

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M29DW128G  
128 Mbit (8 Mb x 16, multiple bank, page, dual boot)  
3 V supply Flash memory  
Features  
Supply voltage  
– V = 2.7 to 3.6 V for program, erase and  
CC  
read  
– V  
– V  
= 1.65 to 3.6 V for I/O buffers  
= 9 V for fast program (optional)  
CCQ  
PPH  
Asynchronous random/page read  
– Page width: 8 words  
TSOP56 (NF)  
14 x 20 mm  
– Page access: 25 ns  
– Random access: 60 or 70, 80 ns  
BGA  
Enhanced Buffered Program commands  
– 256 words  
Programming time  
– 15 µs per word (typical)  
– 32-word write buffer  
TBGA64 (ZA)  
10 x 13 mm  
– Chip program time: 5 s with V  
and 8 s  
PPH  
100,000 program/erase cycles per block  
without V  
PPH  
Low power consumption  
Erase verify  
– Standby and automatic standby  
Memory blocks  
Hardware block protection  
– Quadruple bank memory array:  
16 Mbit+48 Mbit+48 Mbit+16 Mbit  
– V /WP pin for fast program and write  
PP  
protect of the four outermost parameter  
blocks  
– Parameter blocks (at top and bottom)  
Dual operation  
Security features  
– while program or erase in one bank, read in  
any of the other banks  
– Volatile protection  
– Non-volatile protection  
– Password protection  
– Additional block protection  
Program/erase suspend and resume modes  
– Read from any block during program  
suspend  
Extended memory block  
– Read and program another block during  
erase suspend  
– Extra block (128-word factory locked and  
128-word customer lockable) used as  
security block or to store additional  
information  
Unlock Bypass/Block Erase/Chip Erase/Write  
to Buffer/ Enhanced Buffered Program  
commands  
Electronic signature  
– Faster production/batch programming  
– Faster block and chip erase  
– Manufacturer code: 0020h  
– Device code: 227Eh+2220h+2202h  
ECOPACK® packages available  
Common Flash interface  
– 64 bit security code  
March 2008  
Rev 1  
1/85  
www.st.com  
1

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