Datasheet > M29DW256G70ZA6E

M29DW256G70ZA6E

更新时间： 2024-10-27 14:59:03

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
78页	1023K
描述
256Mb (x16), 3V, Multiple Bank, Page, Dual Boot, Parallel NOR Flash Memory

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M29DW256G70ZA6E 数据手册

256Mb: 3V Embedded Parallel NOR Flash

Features

Micron Parallel NOR Flash Embedded

Memory

M29DW256G X16 Multiple Bank, Page, Dual Boot 3V Supply Flash

Memory

• V_PP/WP# pin for fast program and write

– Protects the four outermost parameter blocks

• Software protection

Features

• Supply voltage

– V_CC= 2.7–3.6V (program, erase, read)

– V_CCQ= 1.65–3.6V (I/O buffers)

– V_PPH= 9V for fast program (optional)

• Asynchronous random/page read

– Page size: 8 words

– Page access: 25ns, 30ns

– Random access: 70ns, 80ns

• Fast program commands: 32-word

• Enhanced buffered program commands: 256-word

• Program time

– Volatile protection

– Nonvolatile protection

– Password protection

• Extended memory block

– Programmed or locked at the factory or by the

customer

– 128 word factory locked and 128 word customer

lockable

• Common flash interface

– 64-bit security code

• Low power consumption: standby and automatic

mode

• 100,000 minimum PROGRAM/ERASE cycles per

block

– 16µs per byte/word TYP

– Chip program time: 10 s with V_PPHand 16s with-

out V_PPH

• Memory organization

– Quadruple bank memory array: 32Mb + 96Mb +

96Mb + 32Mb with parameter blocks at top and

bottom

– Dual operation: program/erase in one bank

while reading in any other bank

• Program/erase controller

– Embedded word program algorithms

• Program/erase suspend and resume capability

– Read from any block during a PROGRAM SUS-

PEND operation

– Read or program another block during an ERASE

SUSPEND operation

• Data retention: 20 years (TYP)

• Fortified BGA, TBGA, and TSOP packages

• Green packages available

– RoHS-compliant

– Halogen-free

• Automotive certified parts available

– Automotive device grade: temperature –40°C to

+85°C (automotive grade certified)

• Root part number

– M29DW256G

• Device code

– 227Eh + 223Ch + 2202h

• Unlock bypass, block erase, chip erase, write to buf-

fer, and enhanced buffer program commands

– Fast buffered/batch programming

– Fast block/chip erase

PDF: 09005aef84ecabef

m29dw_256g.pdf - Rev. A 10/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...78

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与M29DW256G70ZA6E相关器件

型号	品牌	获取价格	描述	数据表
M29DW256G70ZA6F	MICRON	获取价格	256Mb (x16), 3V, Multiple Bank, Page, Dual Boot, Parallel NOR Flash Memory
M29DW256G7ANF6E	MICRON	获取价格	256Mb (x16), 3V, Multiple Bank, Page, Dual Boot, Parallel NOR Flash Memory
M29DW256G7ANF6F	MICRON	获取价格	Micron Parallel NOR Flash Embedded Memory
M29DW323	STMICROELECTRONICS	获取价格	FLASH NOR HIGH DENSITY & CONSUMER
M29DW323DB	STMICROELECTRONICS	获取价格	32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
M29DW323DB	NUMONYX	获取价格	32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
M29DW323DB5AN6F	MICRON	获取价格	32Mb (4Mb x8 or 2Mb x16), 3V, Dual Bank 8:24, Boot Block, Parallel NOR Flash Memory
M29DW323DB70N1	NUMONYX	获取价格	32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
M29DW323DB70N1	STMICROELECTRONICS	获取价格	32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
M29DW323DB70N1E	STMICROELECTRONICS	获取价格	32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory

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