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M29DW256G70ZA6E PDF预览

M29DW256G70ZA6E

更新时间: 2024-10-27 14:59:03
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
78页 1023K
描述
256Mb (x16), 3V, Multiple Bank, Page, Dual Boot, Parallel NOR Flash Memory

M29DW256G70ZA6E 数据手册

 浏览型号M29DW256G70ZA6E的Datasheet PDF文件第2页浏览型号M29DW256G70ZA6E的Datasheet PDF文件第3页浏览型号M29DW256G70ZA6E的Datasheet PDF文件第4页浏览型号M29DW256G70ZA6E的Datasheet PDF文件第5页浏览型号M29DW256G70ZA6E的Datasheet PDF文件第6页浏览型号M29DW256G70ZA6E的Datasheet PDF文件第7页 
256Mb: 3V Embedded Parallel NOR Flash  
Features  
Micron Parallel NOR Flash Embedded  
Memory  
M29DW256G X16 Multiple Bank, Page, Dual Boot 3V Supply Flash  
Memory  
• VPP/WP# pin for fast program and write  
– Protects the four outermost parameter blocks  
• Software protection  
Features  
• Supply voltage  
– VCC = 2.7–3.6V (program, erase, read)  
– VCCQ = 1.65–3.6V (I/O buffers)  
– VPPH = 9V for fast program (optional)  
• Asynchronous random/page read  
– Page size: 8 words  
– Page access: 25ns, 30ns  
– Random access: 70ns, 80ns  
• Fast program commands: 32-word  
• Enhanced buffered program commands: 256-word  
• Program time  
– Volatile protection  
– Nonvolatile protection  
– Password protection  
• Extended memory block  
– Programmed or locked at the factory or by the  
customer  
– 128 word factory locked and 128 word customer  
lockable  
• Common flash interface  
– 64-bit security code  
• Low power consumption: standby and automatic  
mode  
• 100,000 minimum PROGRAM/ERASE cycles per  
block  
– 16µs per byte/word TYP  
– Chip program time: 10 s with VPPH and 16s with-  
out VPPH  
• Memory organization  
– Quadruple bank memory array: 32Mb + 96Mb +  
96Mb + 32Mb with parameter blocks at top and  
bottom  
– Dual operation: program/erase in one bank  
while reading in any other bank  
• Program/erase controller  
– Embedded word program algorithms  
• Program/erase suspend and resume capability  
– Read from any block during a PROGRAM SUS-  
PEND operation  
– Read or program another block during an ERASE  
SUSPEND operation  
• Data retention: 20 years (TYP)  
• Fortified BGA, TBGA, and TSOP packages  
• Green packages available  
– RoHS-compliant  
– Halogen-free  
• Automotive certified parts available  
– Automotive device grade: temperature –40°C to  
+85°C (automotive grade certified)  
• Root part number  
– M29DW256G  
• Device code  
– 227Eh + 223Ch + 2202h  
• Unlock bypass, block erase, chip erase, write to buf-  
fer, and enhanced buffer program commands  
– Fast buffered/batch programming  
– Fast block/chip erase  
PDF: 09005aef84ecabef  
m29dw_256g.pdf - Rev. A 10/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2012 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  

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