Datasheet > M29DW128G60ZA6

M29DW128G60ZA6

更新时间： 2024-10-27 05:28:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
85页	736K
描述
IC,EEPROM,NOR FLASH,8MX16,CMOS,BGA,64PIN,PLASTIC

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中文翻译

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数据手册

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M29DW128G60ZA6 数据手册

M29DW128G

128 Mbit (8 Mb x 16, multiple bank, page, dual boot)

3 V supply Flash memory

Features

■ Supply voltage

– V = 2.7 to 3.6 V for program, erase and

read

– V

= 1.65 to 3.6 V for I/O buffers

= 9 V for fast program (optional)

CCQ

PPH

■ Asynchronous random/page read

– Page width: 8 words

TSOP56 (NF)

14 x 20 mm

– Page access: 25 ns

– Random access: 60 or 70, 80 ns

BGA

■ Enhanced Buffered Program commands

– 256 words

■ Programming time

– 15 µs per word (typical)

– 32-word write buffer

TBGA64 (ZA)

10 x 13 mm

– Chip program time: 5 s with V

and 8 s

PPH

■ 100,000 program/erase cycles per block

without V

PPH

■ Low power consumption

■ Erase verify

– Standby and automatic standby

■ Memory blocks

■ Hardware block protection

– Quadruple bank memory array:

16 Mbit+48 Mbit+48 Mbit+16 Mbit

– V /WP pin for fast program and write

protect of the four outermost parameter

blocks

– Parameter blocks (at top and bottom)

■ Dual operation

■ Security features

– while program or erase in one bank, read in

any of the other banks

– Volatile protection

– Non-volatile protection

– Password protection

– Additional block protection

■ Program/erase suspend and resume modes

– Read from any block during program

suspend

■ Extended memory block

– Read and program another block during

erase suspend

– Extra block (128-word factory locked and

128-word customer lockable) used as

security block or to store additional

information

■ Unlock Bypass/Block Erase/Chip Erase/Write

to Buffer/ Enhanced Buffered Program

commands

■ Electronic signature

– Faster production/batch programming

– Faster block and chip erase

– Manufacturer code: 0020h

– Device code: 227Eh+2220h+2202h

■ ECOPACK^®packages available

■ Common Flash interface

– 64 bit security code

March 2008

Rev 1

1/85

www.st.com

12 3 4 5 6 7...85

中文翻译

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与M29DW128G60ZA6相关器件

型号	品牌	获取价格	描述	数据表
M29DW128G60ZA6E	STMICROELECTRONICS	获取价格	IC,EEPROM,NOR FLASH,8MX16,CMOS,BGA,64PIN,PLASTIC
M29DW128G60ZA6E	NUMONYX	获取价格	128 Mbit (8 Mb x 16, multiple bank, page, dual boot) 3 V supply Flash memory
M29DW128G60ZA6E	MICRON	获取价格	128Mb (8Mb x16), 3V, Multiple Bank, Page, Dual Boot, Parallel NOR Flash Memory
M29DW128G60ZA6F	NUMONYX	获取价格	128 Mbit (8 Mb x 16, multiple bank, page, dual boot) 3 V supply Flash memory
M29DW128G60ZA6F	STMICROELECTRONICS	获取价格	IC,EEPROM,NOR FLASH,8MX16,CMOS,BGA,64PIN,PLASTIC
M29DW128G70NF6	STMICROELECTRONICS	获取价格	IC,EEPROM,NOR FLASH,8MX16,CMOS,TSSOP,56PIN,PLASTIC
M29DW128G70NF6E	NUMONYX	获取价格	Flash, 8MX16, 60ns, PDSO56, 14 X 20 MM, ROHS COMPLIANT, PLASTIC, TSSOP-56
M29DW128G70NF6E	STMICROELECTRONICS	获取价格	IC,EEPROM,NOR FLASH,8MX16,CMOS,TSSOP,56PIN,PLASTIC
M29DW128G70NF6E	MICRON	获取价格	128Mb (8Mb x16), 3V, Multiple Bank, Page, Dual Boot, Parallel NOR Flash Memory
M29DW128G70NF6F	NUMONYX	获取价格	Flash, 8MX16, 60ns, PDSO56, 14 X 20 MM, ROHS COMPLIANT, PLASTIC, TSSOP-56

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