Datasheet > M29DW323DB5AN6F

M29DW323DB5AN6F

更新时间： 2024-10-27 15:17:59

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
52页	1120K
描述
32Mb (4Mb x8 or 2Mb x16), 3V, Dual Bank 8:24, Boot Block, Parallel NOR Flash Memory

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M29DW323DB5AN6F 数据手册

M29DW323DT

M29DW323DB

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

SUPPLY VOLTAGE

Figure 1. APackages

–

= 2.7V to 3.6V for Program, Erase

and Read

–

=12V for Fast Program (optional)

ACCESS TIME: 70ns

PROGRAMMING TIME

–

10µs per Byte/Word typical

Double Word/ Quadruple Byte Program

TSOP48 (N)

12 x 20mm

MEMORY BLOCKS

–

Dual Bank Memory Array: 8Mbit+24Mbit

Parameter Blocks (Top or Bottom

Location)

FBGA

DUAL OPERATIONS

–

Read in one bank while Program or Erase

in other

TFBGA48 (ZE)

6 x 8mm

ERASE SUSPEND and RESUME MODES

–

Read and Program another Block during

Erase Suspend

UNLOCK BYPASS PROGRAM COMMAND

–

Faster Production/Batch Programming

/WP PIN for FAST PROGRAM and

WRITE PROTECT

TEMPORARY BLOCK UNPROTECTION

MODE

COMMON FLASH INTERFACE

–

64 bit Security Code

EXTENDED MEMORY BLOCK

–

Extra block used as security block or to

store additional information

LOW POWER CONSUMPTION

Standby and Automatic Standby

–

100,000 PROGRAM/ERASE CYCLES per

BLOCK

ELECTRONIC SIGNATURE

–

Manufacturer Code: 0020h

Top Device Code M29DW323DT: 225Eh

Bottom Device Code M29DW323DB:

225Fh

Automotive Certified Parts Available

January 2018

1/51

12 3 4 5 6 7...52

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M29DW323DB70N3E	MICRON	获取价格	32Mb (4Mb x8 or 2Mb x16), 3V, Dual Bank 8:24, Boot Block, Parallel NOR Flash Memory
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