5秒后页面跳转
M29DW128G60ZA6E PDF预览

M29DW128G60ZA6E

更新时间: 2024-10-27 15:17:11
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
74页 971K
描述
128Mb (8Mb x16), 3V, Multiple Bank, Page, Dual Boot, Parallel NOR Flash Memory

M29DW128G60ZA6E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:BGA
包装说明:TBGA, BGA64,8X8,40针数:64
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.75
最长访问时间:60 ns启动块:BOTTOM/TOP
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PBGA-B64
JESD-609代码:e1长度:13 mm
内存密度:134217728 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:8,62端子数量:64
字数:8388608 words字数代码:8000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8MX16
封装主体材料:PLASTIC/EPOXY封装代码:TBGA
封装等效代码:BGA64,8X8,40封装形状:RECTANGULAR
封装形式:GRID ARRAY页面大小:8 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:32K,128K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:10 mmBase Number Matches:1

M29DW128G60ZA6E 数据手册

 浏览型号M29DW128G60ZA6E的Datasheet PDF文件第2页浏览型号M29DW128G60ZA6E的Datasheet PDF文件第3页浏览型号M29DW128G60ZA6E的Datasheet PDF文件第4页浏览型号M29DW128G60ZA6E的Datasheet PDF文件第5页浏览型号M29DW128G60ZA6E的Datasheet PDF文件第6页浏览型号M29DW128G60ZA6E的Datasheet PDF文件第7页 
128Mb: 3V Embedded Parallel NOR Flash  
Features  
Micron Parallel NOR Flash Embedded  
Memory  
M29DW128G  
• Common flash interface  
– 64-bit security code  
• 100,000 program/erase cycles per block  
• Low power consumption  
– Standby and automatic standby  
• Hardware block protection  
– VPP/WP# pin for fast program and write protect  
of the four outermost parameter blocks  
• Security features  
Features  
• Supply voltage  
– VCC = 2.7–3.6V (program, erase, read)  
– VCCQ = 1.65–3.6V (I/O buffers)  
– VPPH = 9V for fast program (optional)  
• Asynchronous random/page read  
– Page size: 8words  
– Page access: 25ns  
– Random access: 60ns, 70ns, 80ns  
• Enhanced buffered program commands: 256-word  
• Program time  
– 15µs per byte/word TYP  
– 32-word write buffer  
– Chip program time: 5s with VPPH and 8s without  
VPPH  
• Erase verify  
• Memory organization  
– Quadruple bank memory array: 16Mb + 48Mb +  
48Mb + 16Mb  
– Volatile protection  
– Nonvolatile protection  
– Password protection  
– Additional block protection  
• Extra block (128-word factory locked and 128-word  
customer lockable) for security block or additional  
information storage  
– 128-word (256-byte) memory block for perma-  
nent, secure identification  
• Electronic signature  
– Manufacturer code: 0020h  
– Parameter blocks (top and bottom)  
• Dual operation (while program or erase in one  
bank, read from any other bank)  
• Program/erase suspend and resume modes  
– Read from any block during program suspend  
– Read and program another block during erase  
suspend  
– Device code: 227Eh+2220h+2202h  
• RoHS-compliant packages  
– TSOP56 (NF) 14mm x 20mm  
– TBGA64 (ZA) 10mm x 13mm  
• Unlock bypass, block erase, chip erase, write to buf-  
fer, enhanced buffered program commands  
– Fast buffered/batch programming  
– Fast block/chip erase  
PDF: 09005aef8507150c  
m29dw_128g.pdf - Rev. B 02/16 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2012 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  

与M29DW128G60ZA6E相关器件

型号 品牌 获取价格 描述 数据表
M29DW128G60ZA6F NUMONYX

获取价格

128 Mbit (8 Mb x 16, multiple bank, page, dual boot) 3 V supply Flash memory
M29DW128G60ZA6F STMICROELECTRONICS

获取价格

IC,EEPROM,NOR FLASH,8MX16,CMOS,BGA,64PIN,PLASTIC
M29DW128G70NF6 STMICROELECTRONICS

获取价格

IC,EEPROM,NOR FLASH,8MX16,CMOS,TSSOP,56PIN,PLASTIC
M29DW128G70NF6E NUMONYX

获取价格

Flash, 8MX16, 60ns, PDSO56, 14 X 20 MM, ROHS COMPLIANT, PLASTIC, TSSOP-56
M29DW128G70NF6E STMICROELECTRONICS

获取价格

IC,EEPROM,NOR FLASH,8MX16,CMOS,TSSOP,56PIN,PLASTIC
M29DW128G70NF6E MICRON

获取价格

128Mb (8Mb x16), 3V, Multiple Bank, Page, Dual Boot, Parallel NOR Flash Memory
M29DW128G70NF6F NUMONYX

获取价格

Flash, 8MX16, 60ns, PDSO56, 14 X 20 MM, ROHS COMPLIANT, PLASTIC, TSSOP-56
M29DW128G70NF6F STMICROELECTRONICS

获取价格

IC,EEPROM,NOR FLASH,8MX16,CMOS,TSSOP,56PIN,PLASTIC
M29DW128G70ZA6 STMICROELECTRONICS

获取价格

IC,EEPROM,NOR FLASH,8MX16,CMOS,BGA,64PIN,PLASTIC
M29DW128G70ZA6E NUMONYX

获取价格

Flash, 8MX16, 60ns, PBGA64, 10 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, TBGA-64