是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | QFJ |
包装说明: | LEAD FREE, PLASTIC, LCC-32 | 针数: | 32 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.8 |
Is Samacsys: | N | 最长访问时间: | 80 ns |
I/O 类型: | COMMON | JESD-30 代码: | R-PQCC-J32 |
JESD-609代码: | e3 | 长度: | 13.97 mm |
内存密度: | 1048576 bit | 内存集成电路类型: | OTP ROM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 131072 words |
字数代码: | 128000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 128KX8 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | QCCJ |
封装等效代码: | LDCC32,.5X.6 | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 3/3.3 V |
认证状态: | Not Qualified | 座面最大高度: | 3.56 mm |
最大待机电流: | 0.000015 A | 子类别: | OTP ROMs |
最大压摆率: | 0.015 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Matte Tin (Sn) |
端子形式: | J BEND | 端子节距: | 1.27 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 11.43 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
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