Datasheet > M27W102-100B6TR

M27W102-100B6TR

更新时间： 2024-10-28 22:34:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
15页	106K
描述
1 Mbit 64Kb x16 Low Voltage UV EPROM and OTP EPROM

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数据手册

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M27W102-100B6TR 数据手册

M27W102

1 Mbit (64Kb x16) Low Voltage UV EPROM and OTP EPROM

■ 2.7V to 3.6V LOW VOLTAGE in READ

OPERATION

■ READ ACCESS TIME:

– 70ns at V = 3.0V to 3.6V

– 80ns at V = 2.7V to 3.6V

■ PIN COMPATIBLE with M27C1024

■ LOW POWER CONSUMPTION:

– 15µA max Standby Current

FDIP40W (F)

PDIP40 (B)

– 15mA max Active Current at 5MHz

■ PROGRAMMING TIME 100µs/word

■ HIGH RELIABILITY CMOS TECHNOLOGY

– 2,000V ESD Protection

– 200mA Latchup Protection Immunity

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

PLCC44 (K)

TSOP40 (N)

10 x 14 mm

Figure 1. Logic Diagram

– Device Code: 008Ch

DESCRIPTION

The M27W102 is a low voltage 1 Mbit EPROM of-

fered in the two ranges UV (ultra violet erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems requiring large data or

program storage and is organized as 65,536

words by 16 bits.

The M27W102 operates in the read mode with a

supply voltage as low as 2.7V at –40 to 85°C tem-

perature range. The decrease in operating power

allows either a reduction of the size of the battery

or an increase in the time between battery re-

charges.

A0-A15

Q0-Q15

M27W102

The FDIP40W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

For application where the content is programmed

only one time and erasure is not required, the

M27w102 is offered in PDIP40, PLCC44 and

TSOP40 (10 x 14 mm) packages.

AI01922

April 2000

1/15

12 3 4 5 6 7...15

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