是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | DIP, DIP40,.6 |
针数: | 40 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.71 |
风险等级: | 5.84 | 最长访问时间: | 80 ns |
I/O 类型: | COMMON | JESD-30 代码: | R-PDIP-T40 |
JESD-609代码: | e3 | 长度: | 52.18 mm |
内存密度: | 1048576 bit | 内存集成电路类型: | OTP ROM |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 40 | 字数: | 65536 words |
字数代码: | 64000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 64KX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装等效代码: | DIP40,.6 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 3/3.3 V |
认证状态: | Not Qualified | 最大待机电流: | 0.000015 A |
子类别: | OTP ROMs | 最大压摆率: | 0.015 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 15.24 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M27W102-80B6TR | STMICROELECTRONICS |
获取价格 |
1 Mbit 64Kb x16 Low Voltage UV EPROM and OTP EPROM | |
M27W102-80F6 | STMICROELECTRONICS |
获取价格 |
64KX16 UVPROM, 80ns, CDIP40, FRIT SEALED, WINDOWED, CERAMIC, DIP-40 | |
M27W102-80F6TR | STMICROELECTRONICS |
获取价格 |
1 Mbit 64Kb x16 Low Voltage UV EPROM and OTP EPROM | |
M27W102-80K6 | STMICROELECTRONICS |
获取价格 |
64KX16 OTPROM, 80ns, PQCC44, PLASTIC, LCC-44 | |
M27W102-80K6TR | STMICROELECTRONICS |
获取价格 |
1 Mbit 64Kb x16 Low Voltage UV EPROM and OTP EPROM | |
M27W102-80N6 | STMICROELECTRONICS |
获取价格 |
暂无描述 | |
M27W102-80N6TR | STMICROELECTRONICS |
获取价格 |
1 Mbit 64Kb x16 Low Voltage UV EPROM and OTP EPROM | |
M27W1282100M1 | STMICROELECTRONICS |
获取价格 |
4MX16 OTPROM, 100ns, PDSO44, 0.500 INCH, PLASTIC, SO-44 | |
M27W1282100M1T | STMICROELECTRONICS |
获取价格 |
4MX16 OTPROM, 100ns, PDSO44, 0.500 INCH, PLASTIC, SO-44 | |
M27W1282120M1 | STMICROELECTRONICS |
获取价格 |
4MX16 OTPROM, 120ns, PDSO44, 0.500 INCH, PLASTIC, SO-44 |