Datasheet > LX5518LQ-TR

LX5518LQ-TR

更新时间： 2024-11-11 21:07:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		射频微波
页数	文件大小	规格书
2页	109K
描述
Narrow Band Low Power Amplifier, 2400MHz Min, 2500MHz Max, 3 X 3 MM ,ROHS COMPLIANT, PLASTIC, MLP, QFN-16

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

LX5518LQ-TR 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	1.67
构造：	COMPONENT	增益：	30 dB
最大工作频率：	2500 MHz	最小工作频率：	2400 MHz
射频/微波设备类型：	NARROW BAND LOW POWER	Base Number Matches：	1

LX5518LQ-TR 数据手册

LX5518

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

PRODUCTION DATA SHEET

KEY FEATURES

Advanced InGaP HBT

2.4-2.5GHz Operation

Single-Polarity 3-5V Supply

Power Gain ~ 30 dB

26dBm @3%EVM,802.11g/5V

24dBm @3.5%EVM,80211g/3.3V

28dBm @CCK,802.11b/5V

27dBm @CCK,802.11b/3.3V

24.5% Efficiency @28dBm/5V

Complete On-Chip Input Match

Simple Output Match for Optimal

EVM

DESCRIPTION

The LX5518 is a high gain and high

LX5518 also features an on-chip

power

amplifier

optimized

for power detector at the output port of

802.11b/g/n applications in the 2.4-2.5 the PA to help reduce BOM cost and

GHz frequency range. The PA is PCB space for implementation of

implemented as a three-stage monolithic power control in a typical wireless

microwave integrated circuit (MMIC) system.

with active bias, on-chip input

matching, and output pre-matching.

The device is manufactured with an

InGaP/GaAs Heterojunction Bipolar

The LX5518 is available in a 16-

pin 3mm x 3mm quad flat no lead

package (QFN 3×3-16L). The

compact footprint, low profile, and

excellent thermal capability make the

LX5518 an ideal solution for

802.11b/g/n applications.

Transistor

(HBT)

process

Temperature-Compensated On-

Chip Output Power Detector with

Wide Dynamic Range

(MOCVD). It operates with a single

positive voltage supply of 3-5V, and

provides a power gain of 30dB and an

output power of +26dBm at 5V for 3%

EVM in the 2.4-2.5GHz.

Small Footprint: 3x3mm²

Low Profile: 0.9mm

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

APPLICATIONS

802.11b/g/n

BLOCK DIAGRAM

Input

Output

Active Bias Network

Vref

Det

3X3MM MLP PACKAGE

PACKAGE ORDER INFO

Plastic QFN 3×3

16 pin

MSC

5518

936A

RoHS Compliant / Pb-free

LX5518LQ

Note: Available in Tape & Reel. Append the letters

“TR” to the part number. (i.e. LX5518LQ-TR)

Rev. 1.0, 2009-09-30

Microsemi

Page 1

Analog Mixed Signal Group

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

中文翻译

下载PDF

与LX5518LQ-TR相关器件

型号	品牌	获取价格	描述	数据表
LX5530	MICROSEMI	获取价格	InGaP HBT 4.5 - 6.0GHz Power Amplifier
LX5530LQ	MICROSEMI	获取价格	InGaP HBT 4.5 - 6.0GHz Power Amplifier
LX5535	MICROSEMI	获取价格	InGaP HBT 2.4 - 2.5 GHz Power Amplifier
LX5535LQ	MICROSEMI	获取价格	InGaP HBT 2.4 - 2.5 GHz Power Amplifier
LX5537	MICROSEMI	获取价格	InGaP HBT 2.3 - 2.7 GHz Power Amplifier
LX5537LQ	MICROSEMI	获取价格	InGaP HBT 2.3 - 2.7 GHz Power Amplifier
LX5540	MICROSEMI	获取价格	Co-Package 2.3 - 2.5 GHz HBT Power Amplifier & pHEMT Low Noise Amplifier
LX5540LL	MICROSEMI	获取价格	Narrow Band Medium Power Amplifier, 2300MHz Min, 2500MHz Max, 3 X 3 MM, ROHS COMPLIANT, PL
LX5540LL-TR	MICROSEMI	获取价格	Narrow Band Medium Power Amplifier, 2300MHz Min, 2500MHz Max, 3 X 3 MM, ROHS COMPLIANT, PL
LX5541	MICROSEMI	获取价格	Co-Package 2.3 - 2.5 GHz HBT Power Amp + pHEMT Low Noise Amplifier + SPDT Switch

与LX5518LQ-TR相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

LX5518LQ-TR

LX5518LQ-TR 技术参数

LX5518LQ-TR 数据手册

与LX5518LQ-TR相关器件

与LX5518LQ-TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

LX5518LQ-TR

LX5518LQ-TR 技术参数

LX5518LQ-TR 数据手册

与LX5518LQ-TR相关器件

与LX5518LQ-TR相关文章

您还可以找

您在本页遇到什么问题？