Datasheet > 射频和微波 > 射频/微波放大器> LX5553LU-TR

LX5553LU-TR

更新时间： 2024-11-11 11:40:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		射频和微波开关射频放大器微波放大器功率放大器
页数	文件大小	规格书
3页	91K
描述
2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SP3T Switch

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LX5553LU-TR 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	LCC16,.12SQ,20
Reach Compliance Code：	compliant	风险等级：	5.72
Is Samacsys：	N	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	25 dB
最大输入功率 (CW)：	10 dBm	JESD-609代码：	e3
安装特点：	SURFACE MOUNT	功能数量：	2
端子数量：	16	最大工作频率：	2500 MHz
最小工作频率：	2400 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	LCC16,.12SQ,20	电源：	3/4.2 V
射频/微波设备类型：	WIDE BAND MEDIUM POWER	子类别：	RF/Microwave Amplifiers
表面贴装：	YES	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

LX5553LU-TR 数据手册

LX5553

2.4-2.5 GHz Front-End Module with Internally

Matched Power Amplifier, LNA & SP3T Switch

PRODUCTION DATA SHEET

K E Y F E A T U R E S

D E S C R I P T I O N

LX5553 is a high-integration, high- provides about 25dB power gain, and

performance WLAN front-end module +17dBm linear output power, with

(FEM) for 802.11b/g/n and other EVM (<3%) for 64QAM/ 54Mbps

applications in the 2.4-2.5GHz OFDM. Both gain and power are

frequency range. LX5553 integrates readily measured at antenna port, with

an advanced InGaP/GaAs Hetero- the insertion loss of the SP3T switch

junction Bipolar Transistor (HBT) included.

. 2.4-2.5GHz 802.11b/g/n Front-

End Solution in a Single MLP

Package

. SP3T for Sharing Antenna

between WLAN and Bluetooth

systems

. All RF I/O Matched to 50 

. Single-Supply Voltage 3.0V to

4.2V

power amplifier with on chip

The Rx path of LX5553 features

impedance matching, a fully matched 13dB small-signal gain, noise figure of

low noise amplifier based on InGaAs 2.1dB, and high input referred third-

Enhancement mode pseudo-morphic order harmonic intercept point (IIP3) of

high electron mobility transistor (E- +5dBm, including the SP3T switch loss.

pHEMT) technology, and a Depletion The LNA consumes about 11mA

mode pHEMT (D-pHEMT) single- current with a single 3.6V supply.

. Small Footprint: 3x3mm²

. Low Profile: 0.55mm

. RoHS Compliant & Pb-Free

TX Features :

. Power Gain ~ 25 dB*

. Pout ~ +17 dBm* for 3% EVM at

Antenna

. Current ~145 mA at +17 dBm*

. Pout ~ +21 dBm* for 11b 1Mbps

DSSS Mask Compliance

. Quiescent Current ~ 82 mA

pole triple-throw (SP3T) switch, all

The Bluetooth path of LX5553

into a single package with 3x3mm features low insertion loss of 0.9dB and

footprint. LX5553 provides capability high input referred 1dB gain

of sharing a single antenna between compression point (IP_1dB) of +29dBm.

WLAN and Bluetooth systems

through the SP3T switch.

LX5553 is available in a 16-pin, low

profile of 0.55mm, 3x3mm²micro-lead

The Tx path of LX5553 features a package (MLPQ-16L) in very low

two-stage monolithic microwave profile of 0.55mm. With its high level

integrated circuit (MMIC) power of functional integration, best-class

amplifier with active bias circuitry, performance, compact footprint and low

on-chip output power detector, and profile, LX5553 offers an ideal front-

RX Features :

. Gain ~ 13 dB*

. Noise Figure ~ 2.1 dB*

. IIP3 ~ +5 dBm*

end solution for the ever demanding

design requirements of today’s highly

integrated mobile equipments, including

802.11b/g/n and Bluetooth applications.

50 input/output matching inside the

package. With 3.6V supply voltage

and 82mA bias current, the Tx path

Bluetooth Path :

. Insertion Loss ~ 0.9 dB

. IP1dB ~ +29 dBm

* Including SP3T switch loss

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

A P P L I C A T I O N S

. IEEE 802.11b/g/n

. Mobile Phone WLAN module

B L O C K D I A G R A M

PAOut/

Vc2

Vref Vc1

SwIn

IMN*

OMN*

TxIn

Det

Antenna

Port

LNAOut

Vdd

LNA

*IMN:

Input Matching Network

*OMN:

CtrlTx / CtrlRx / CtrlBT

Output Matching Network

Rev. 1.0, 2010-03-18

Microsemi

Analog Mixed Signal Group

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 1

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与LX5553LU-TR相关器件

型号	品牌	获取价格	描述	数据表
LX5560	MICROSEMI	获取价格	InGaAs - E-Mode pHEMT Low Noise Amplifier
LX5560L	MICROSEMI	获取价格	InGaAs - E-Mode pHEMT Low Noise Amplifier
LX5560LL	MICROSEMI	获取价格	暂无描述
LX5560LL-TR	MICROSEMI	获取价格	Wide Band Low Power Amplifier, 4900MHz Min, 6000MHz Max, 1 Func, 2X2 MM, ROHS COMPLIANT, L
LX5561	MICROSEMI	获取价格	InGaAs - E-Mode pHEMT Low Noise Amplifier
LX5561LL	MICROSEMI	获取价格	InGaAs - E-Mode pHEMT Low Noise Amplifier
LX5561LL-TR	MICROCHIP	获取价格	RF/Microwave Amplifier
LX60-12BS	HRS	获取价格	Ultra Low-profile Interface Connectors with 2.0 mm Mounting Height
LX60-12P	HRS	获取价格	Telecom and Datacom Connector, 12 Contact(s), Male, Right Angle, Surface Mount Terminal, P
LX60-12S	HRS	获取价格	Ultra Low-profile Interface Connectors with 2.0 mm Mounting Height

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