Datasheet > LX5530

LX5530

更新时间： 2024-11-11 03:51:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		放大器功率放大器
页数	文件大小	规格书
2页	96K
描述
InGaP HBT 4.5 - 6.0GHz Power Amplifier

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LX5530 数据手册

LX5530

InGaP HBT 4.5 – 6.0GHz Power Amplifier

PRODUCTION DATA SHEET

KEY FEATURES

DESCRIPTION

Broadband 4.9 – 5.9GHz

Operation

Advanced InGaP HBT

Single-Polarity 3 – 5V Supply

Power Gain up to ~ 33dB for

V_C=5V, Icq = 250mA

Power Gain > ~28dB across 4.9-

5.85GHz

OFDM Mask Compliance Power

Pout ~ +25dBm over 4.9-

5.85GHz (ACPR ~ -50dBc @

±30MHz Offset)

Pout up to +23dBm with EVM

~3% (V_C= 5V)

EVM < ~2.5% for

Pout=+21dBm across 4.9-

5.85GHz (V_C= 5V)

EVM < ~2.5% for

Pout=+19dBm across 4.9-

5.85GHz (V_C= 4V)

Total Current ~250mA for Pout =

+20dBm, Duty Cycle = 99%

(V_C= 4V)

Complete On-Chip Input Match

Simple Output Match for Optimal

Broadband EVM

The LX5530 is a power amplifier

The LX5530 also features an on-chip

optimized for the FCC Unlicensed power detector at the output port of the

National Information Infrastructure PA to help reduce BOM cost and PCB

(U-NII) band, HyperLAN2 and Japan space for implementation of power

WLAN applications in the 4.9 – 5.9 control in a typical wireless system. The

GHz frequency range. The PA is power detector is integrated with a

implemented as a three-stage monolithic temperature-compensated bias network

microwave integrated circuit (MMIC) and provides very stable response

with active bias, on-chip input across a wide range of output power

matching and output pre-matching. levels, over temperature extremes from

The device is manufactured with an -40 to +85°C.

InGaP/GaAs Heterojunction Bipolar

Transistor (HBT) IC process 3mmx3mm micro-lead package (MLP).

The LX5530 is available in a 16-pin

(MOCVD). It operates with a single The compact footprint, low profile, and

positive voltage supply of 3 – 5V, excellent thermal capability makes the

with high power gain of up to 33dB. LX5530 an ideal solution for

When operated at 5V supply voltage, broadband, high-gain power amplifier

it provides up to +25dBm linear requirements for IEEE 802.11a, and

output power for 802.11a OFDM Hiperlan2 portable WLAN, as well as

spectrum mask compliance, and low the

EVM of 3% for up to +23dBm output applications.

power in the 4.9-5.9GHz band.

emerging

802.16

WiMAX

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

On-Chip RF Decoupling

Temperature-Compensated On-

Chip Output Power Detector

with Wide Dynamic Range

Small Footprint: 3x3mm

Low Profile: 0.9mm

BLOCK DIAGRAM

APPLICATIONS

Input

Output

FCC U-NII Wireless

IEEE 802.11a

HiperLAN2

5GHz Cordless Phone

IEEE 802.16 WiMAX

Active Bias Network

Vref

Det

3X3MM MLP PACKAGE

PACKAGE ORDER INFO

Plastic MLPQ

16 pin

MSC

5530

608Y

RoHS Compliant / Pb-free

LX5530LQ

Note: Available in Tape & Reel. Append the letters

“TR” to the part number. (i.e. LX5530LQ-TR)

Rev. 1.0a, 2006-09-12

Microsemi

Page 1

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

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与LX5530相关器件

型号	品牌	获取价格	描述	数据表
LX5530LQ	MICROSEMI	获取价格	InGaP HBT 4.5 - 6.0GHz Power Amplifier
LX5535	MICROSEMI	获取价格	InGaP HBT 2.4 - 2.5 GHz Power Amplifier
LX5535LQ	MICROSEMI	获取价格	InGaP HBT 2.4 - 2.5 GHz Power Amplifier
LX5537	MICROSEMI	获取价格	InGaP HBT 2.3 - 2.7 GHz Power Amplifier
LX5537LQ	MICROSEMI	获取价格	InGaP HBT 2.3 - 2.7 GHz Power Amplifier
LX5540	MICROSEMI	获取价格	Co-Package 2.3 - 2.5 GHz HBT Power Amplifier & pHEMT Low Noise Amplifier
LX5540LL	MICROSEMI	获取价格	Narrow Band Medium Power Amplifier, 2300MHz Min, 2500MHz Max, 3 X 3 MM, ROHS COMPLIANT, PL
LX5540LL-TR	MICROSEMI	获取价格	Narrow Band Medium Power Amplifier, 2300MHz Min, 2500MHz Max, 3 X 3 MM, ROHS COMPLIANT, PL
LX5541	MICROSEMI	获取价格	Co-Package 2.3 - 2.5 GHz HBT Power Amp + pHEMT Low Noise Amplifier + SPDT Switch
LX5541LL	MICROSEMI	获取价格	Co-Package 2.3 - 2.5 GHz HBT Power Amp + pHEMT Low Noise Amplifier + SPDT Switch

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