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LX5553LU PDF预览

LX5553LU

更新时间: 2024-11-11 11:40:47
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美高森美 - MICROSEMI 开关放大器功率放大器
页数 文件大小 规格书
3页 91K
描述
2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SP3T Switch

LX5553LU 数据手册

 浏览型号LX5553LU的Datasheet PDF文件第2页浏览型号LX5553LU的Datasheet PDF文件第3页 
LX5553  
®
2.4-2.5 GHz Front-End Module with Internally  
TM  
Matched Power Amplifier, LNA & SP3T Switch  
PRODUCTION DATA SHEET  
K E Y F E A T U R E S  
D E S C R I P T I O N  
LX5553 is a high-integration, high- provides about 25dB power gain, and  
performance WLAN front-end module +17dBm linear output power, with  
(FEM) for 802.11b/g/n and other EVM (<3%) for 64QAM/ 54Mbps  
applications in the 2.4-2.5GHz OFDM. Both gain and power are  
frequency range. LX5553 integrates readily measured at antenna port, with  
an advanced InGaP/GaAs Hetero- the insertion loss of the SP3T switch  
junction Bipolar Transistor (HBT) included.  
. 2.4-2.5GHz 802.11b/g/n Front-  
End Solution in a Single MLP  
Package  
. SP3T for Sharing Antenna  
between WLAN and Bluetooth  
systems  
. All RF I/O Matched to 50  
. Single-Supply Voltage 3.0V to  
4.2V  
power amplifier with on chip  
The Rx path of LX5553 features  
impedance matching, a fully matched 13dB small-signal gain, noise figure of  
low noise amplifier based on InGaAs 2.1dB, and high input referred third-  
Enhancement mode pseudo-morphic order harmonic intercept point (IIP3) of  
high electron mobility transistor (E- +5dBm, including the SP3T switch loss.  
pHEMT) technology, and a Depletion The LNA consumes about 11mA  
mode pHEMT (D-pHEMT) single- current with a single 3.6V supply.  
. Small Footprint: 3x3mm2  
. Low Profile: 0.55mm  
. RoHS Compliant & Pb-Free  
TX Features :  
. Power Gain ~ 25 dB*  
. Pout ~ +17 dBm* for 3% EVM at  
Antenna  
. Current ~145 mA at +17 dBm*  
. Pout ~ +21 dBm* for 11b 1Mbps  
DSSS Mask Compliance  
. Quiescent Current ~ 82 mA  
pole triple-throw (SP3T) switch, all  
The Bluetooth path of LX5553  
into a single package with 3x3mm features low insertion loss of 0.9dB and  
footprint. LX5553 provides capability high input referred 1dB gain  
of sharing a single antenna between compression point (IP1dB) of +29dBm.  
WLAN and Bluetooth systems  
through the SP3T switch.  
LX5553 is available in a 16-pin, low  
profile of 0.55mm, 3x3mm2 micro-lead  
The Tx path of LX5553 features a package (MLPQ-16L) in very low  
two-stage monolithic microwave profile of 0.55mm. With its high level  
integrated circuit (MMIC) power of functional integration, best-class  
amplifier with active bias circuitry, performance, compact footprint and low  
on-chip output power detector, and profile, LX5553 offers an ideal front-  
RX Features :  
. Gain ~ 13 dB*  
. Noise Figure ~ 2.1 dB*  
. IIP3 ~ +5 dBm*  
end solution for the ever demanding  
design requirements of today’s highly  
integrated mobile equipments, including  
802.11b/g/n and Bluetooth applications.  
50input/output matching inside the  
package. With 3.6V supply voltage  
and 82mA bias current, the Tx path  
Bluetooth Path :  
. Insertion Loss ~ 0.9 dB  
. IP1dB ~ +29 dBm  
* Including SP3T switch loss  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
A P P L I C A T I O N S  
. IEEE 802.11b/g/n  
. Mobile Phone WLAN module  
B L O C K D I A G R A M  
PAOut/  
Vc2  
Vref Vc1  
SwIn  
IMN*  
PA  
OMN*  
TxIn  
Det  
Antenna  
Port  
LNAOut  
Vdd  
LNA  
BT  
*IMN:  
Input Matching Network  
*OMN:  
CtrlTx / CtrlRx / CtrlBT  
Output Matching Network  
Copyright 2010  
Rev. 1.0, 2010-03-18  
Microsemi  
Analog Mixed Signal Group  
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570  
Page 1  

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