Datasheet > LX5552LU

LX5552LU

更新时间： 2024-11-11 05:44:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		开关放大器功率放大器光电二极管
页数	文件大小	规格书
3页	92K
描述
2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SPDT Switch

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

LX5552LU 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	QFN
包装说明：	QCCN,	针数：	16
Reach Compliance Code：	compliant	HTS代码：	8542.39.00.01
风险等级：	5.47	JESD-30 代码：	S-PQCC-N16
JESD-609代码：	e3	长度：	3 mm
湿度敏感等级：	1	功能数量：	1
端子数量：	16	最高工作温度：	85 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装代码：	QCCN	封装形状：	SQUARE
封装形式：	CHIP CARRIER	峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified	标称供电电压：	3.3 V
表面贴装：	YES	技术：	BIPOLAR
电信集成电路类型：	RF FRONT END CIRCUIT	温度等级：	INDUSTRIAL
端子面层：	MATTE TIN	端子形式：	NO LEAD
端子位置：	QUAD	处于峰值回流温度下的最长时间：	40
宽度：	3 mm	Base Number Matches：	1

LX5552LU 数据手册

LX5552

2.4-2.5 GHz Front-End Module with Internally

Matched Power Amplifier, LNA & SPDT Switch

PRODUCTION DATA SHEET

KEY FEATURES

DESCRIPTION

LX5552 is a high-integration, high- +17dBm linear output power, with low

performance WLAN front-end module total EVM (<3%) for 64QAM/ 54Mbps

(FEM) for 802.11b/g/n and other OFDM. Both gain and power are

applications in the 2.4-2.5GHz readily measured at antenna port with

frequency range. LX5552 integrates a the insertion loss of the Tx switch

fully matched InGaP/GaAs Hetero- included.

2.4-2.5GHz 802.11b/g/n Front-

End Solution in a Single MLP

Package

All RF I/O Matched to 50 Ω

Single-Polarity 3.3V Supply

Small Footprint: 3x3mm²

Low Profile: 0.55mm

junction Bipolar Transistor (HBT)

The Rx path of LX5552 features

power amplifier, a low noise amplifier small-signal gain of 12.5dB, low noise

based on InGaAs Enhancement mode figure of 2dB, and high input third-

RoHS Compliant & Pb-Free

pseudo-morphic

mobility transistor

technology, and a low-cost Depletion switch loss included. The LNA

mode pHEMT (D-pHEMT) single consumes about 10mA current with

pole double throw (SPDT) antenna 3.3V supply voltage.

high

electron order intercept point (IIP3) of +5dBm

(E-pHEMT) with the insertion loss of the the Rx

TX Features :

Power Gain ~ 26dB*

Pout ~ +17dBm* for 3% EVM

Current ~140mA at +17dBm

Pout ~ +21dBm* for 11b

1Mbps DSSS Mask

switch in a single package.

LX5552 is available in a 16-pin,

The Tx path of LX5552 features a 3x3mm micro-lead package (MLPQ-

two-stage monolithic microwave 16L). With its high level of functional

integrated circuit (MMIC) power integration, best-class performance,

amplifier with active bias circuitry, compact footprint and low profile,

on-chip output power detector, and LX5552 offers an ideal front-end

Compliance

Quiescent Current ~ 80mA

RX Features :

Gain ~ 12.5dB*

Noise Figure ~ 2dB*

IIP3 ~ +5dBm*

solution for the ever demanding design

requirements of today’s WLAN

systems, including 802.11b/g and the

latest 11n MIMO applications.

50Ω input/output matching inside the

package. With 3.3V supply voltage

and 80mA bias current, the Tx path

provides about 26dB power gain and

* Including SPDT switch loss

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

APPLICATIONS

IEEE 802.11b/g

IEEE 802.11n MIMO

BLOCK DIAGRAM

Vref Vc1

Vc2

SwIn

Out

IMN*

OMN*

TxIn

Det

Antenna

Port

LNA

RxOut

*IMN:

Input Matching Network

*OMN:

Output Matching Network

CtrlTx

CtrlRx

Vdd

Rev. 1.0, 2009-06-02

Microsemi

Analog Mixed Signal Group

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 1

12 3

中文翻译

下载PDF

与LX5552LU相关器件

型号	品牌	获取价格	描述	数据表
LX5553	MICROSEMI	获取价格	2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SP3T Switch
LX5553LU	MICROSEMI	获取价格	2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SP3T Switch
LX5553LU-TR	MICROSEMI	获取价格	2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SP3T Switch
LX5560	MICROSEMI	获取价格	InGaAs - E-Mode pHEMT Low Noise Amplifier
LX5560L	MICROSEMI	获取价格	InGaAs - E-Mode pHEMT Low Noise Amplifier
LX5560LL	MICROSEMI	获取价格	暂无描述
LX5560LL-TR	MICROSEMI	获取价格	Wide Band Low Power Amplifier, 4900MHz Min, 6000MHz Max, 1 Func, 2X2 MM, ROHS COMPLIANT, L
LX5561	MICROSEMI	获取价格	InGaAs - E-Mode pHEMT Low Noise Amplifier
LX5561LL	MICROSEMI	获取价格	InGaAs - E-Mode pHEMT Low Noise Amplifier
LX5561LL-TR	MICROCHIP	获取价格	RF/Microwave Amplifier

与LX5552LU相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

LX5552LU

LX5552LU 技术参数

LX5552LU 数据手册

与LX5552LU相关器件

与LX5552LU相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

LX5552LU

LX5552LU 技术参数

LX5552LU 数据手册

与LX5552LU相关器件

与LX5552LU相关文章

您还可以找

您在本页遇到什么问题？