Datasheet > LX5552

LX5552

更新时间： 2024-11-11 05:44:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		开关放大器功率放大器光电二极管
页数	文件大小	规格书
3页	92K
描述
2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SPDT Switch

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LX5552 数据手册

LX5552

2.4-2.5 GHz Front-End Module with Internally

Matched Power Amplifier, LNA & SPDT Switch

PRODUCTION DATA SHEET

KEY FEATURES

DESCRIPTION

LX5552 is a high-integration, high- +17dBm linear output power, with low

performance WLAN front-end module total EVM (<3%) for 64QAM/ 54Mbps

(FEM) for 802.11b/g/n and other OFDM. Both gain and power are

applications in the 2.4-2.5GHz readily measured at antenna port with

frequency range. LX5552 integrates a the insertion loss of the Tx switch

fully matched InGaP/GaAs Hetero- included.

2.4-2.5GHz 802.11b/g/n Front-

End Solution in a Single MLP

Package

All RF I/O Matched to 50 Ω

Single-Polarity 3.3V Supply

Small Footprint: 3x3mm²

Low Profile: 0.55mm

junction Bipolar Transistor (HBT)

The Rx path of LX5552 features

power amplifier, a low noise amplifier small-signal gain of 12.5dB, low noise

based on InGaAs Enhancement mode figure of 2dB, and high input third-

RoHS Compliant & Pb-Free

pseudo-morphic

mobility transistor

technology, and a low-cost Depletion switch loss included. The LNA

mode pHEMT (D-pHEMT) single consumes about 10mA current with

pole double throw (SPDT) antenna 3.3V supply voltage.

high

electron order intercept point (IIP3) of +5dBm

(E-pHEMT) with the insertion loss of the the Rx

TX Features :

Power Gain ~ 26dB*

Pout ~ +17dBm* for 3% EVM

Current ~140mA at +17dBm

Pout ~ +21dBm* for 11b

1Mbps DSSS Mask

switch in a single package.

LX5552 is available in a 16-pin,

The Tx path of LX5552 features a 3x3mm micro-lead package (MLPQ-

two-stage monolithic microwave 16L). With its high level of functional

integrated circuit (MMIC) power integration, best-class performance,

amplifier with active bias circuitry, compact footprint and low profile,

on-chip output power detector, and LX5552 offers an ideal front-end

Compliance

Quiescent Current ~ 80mA

RX Features :

Gain ~ 12.5dB*

Noise Figure ~ 2dB*

IIP3 ~ +5dBm*

solution for the ever demanding design

requirements of today’s WLAN

systems, including 802.11b/g and the

latest 11n MIMO applications.

50Ω input/output matching inside the

package. With 3.3V supply voltage

and 80mA bias current, the Tx path

provides about 26dB power gain and

* Including SPDT switch loss

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

APPLICATIONS

IEEE 802.11b/g

IEEE 802.11n MIMO

BLOCK DIAGRAM

Vref Vc1

Vc2

SwIn

Out

IMN*

OMN*

TxIn

Det

Antenna

Port

LNA

RxOut

*IMN:

Input Matching Network

*OMN:

Output Matching Network

CtrlTx

CtrlRx

Vdd

Rev. 1.0, 2009-06-02

Microsemi

Analog Mixed Signal Group

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 1

12 3

中文翻译

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与LX5552相关器件

型号	品牌	获取价格	描述	数据表
LX5552LU	MICROSEMI	获取价格	2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SPDT Switch
LX5553	MICROSEMI	获取价格	2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SP3T Switch
LX5553LU	MICROSEMI	获取价格	2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SP3T Switch
LX5553LU-TR	MICROSEMI	获取价格	2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SP3T Switch
LX5560	MICROSEMI	获取价格	InGaAs - E-Mode pHEMT Low Noise Amplifier
LX5560L	MICROSEMI	获取价格	InGaAs - E-Mode pHEMT Low Noise Amplifier
LX5560LL	MICROSEMI	获取价格	暂无描述
LX5560LL-TR	MICROSEMI	获取价格	Wide Band Low Power Amplifier, 4900MHz Min, 6000MHz Max, 1 Func, 2X2 MM, ROHS COMPLIANT, L
LX5561	MICROSEMI	获取价格	InGaAs - E-Mode pHEMT Low Noise Amplifier
LX5561LL	MICROSEMI	获取价格	InGaAs - E-Mode pHEMT Low Noise Amplifier

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