Datasheet > LX5551LQ

LX5551LQ

更新时间： 2024-11-11 20:09:31

品牌	Logo	应用领域
美国微芯 - MICROCHIP		射频微波
页数	文件大小	规格书
9页	502K
描述
Narrow Band Low Power Amplifier

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中文翻译

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技术参数
数据手册

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LX5551LQ 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.68	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	27 dB
最大输入功率 (CW)：	10 dBm	最大工作频率：	2500 MHz
最小工作频率：	2400 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	NARROW BAND LOW POWER
Base Number Matches：	1

LX5551LQ 数据手册

LX5551

2.4-2.5 GHz Front-End Module with Internally

Matched Power Amplifier & SPDT for 11b/g/n

PRODUCTION DATA SHEET

KEY FEATURES

DESCRIPTION

high-performance The Rx path of LX5551 includes a

WLAN front-end module (FEM) for low-cost SPDT switch with excellent

802.11b/g/n and other applications in insertion loss and isolation. It features a

the 2.4-2.5GHz frequency range. very low Tx-to-Rx port leakage in

LX5551 integrates an advanced receive mode.

LX5551 is

▪ 2.4-2.5GHz 11b/g/n Front-End

Solution in a Single 3x3mm

MLP Package

▪ All RF Ports Matched to 50 

▪ Single-Polarity 3.3V Supply

▪ Tx Path Power Gain ~ 27dB

▪ Rx Path Loss ~ 0.6dB

InGaP/GaAs Heterojunction Bipolar

LX5551 is available in a 16-pin,

Transistor (HBT) power amplifier with 3x3mm micro-lead package (MLPQ-

both input/output impedance matching, 16L). With its best-class performance

and an InGaAs pseudomorphic HEMT and compact footprint, LX5551 offers an

(pHEMT) switch, into a single 3x3mm ideal front-end solution for the ever

▪ Pout ~ +18dBm at Antenna* for

EVM = 3%

▪ Total Current ~140mA for

+18dBm with 90% Duty Cycle

▪ Pout > +22dBm for 11b 1Mbps

DSSS Mask Compliance

package.

demanding design requirements of

The Tx path of LX5551 features a today’s WLAN systems,

including

two-stage

monolithic

microwave 802.11b/g and the latest 11n MIMO

▪ Small Footprint: 3x3mm²

▪ Low Profile: 0.9mm

integrated circuit (MMIC) power implementation.

amplifier with active bias circuitry, and

50  input/output matching inside the

package. With 3.3V supply voltage and

90mA nominal bias current, the Tx

path provides 27dB gain and +18dBm

linear output power, with extremely low

total EVM (<3%) for 64QAM/54Mbps

OFDM. Both gain and power are

readily measured at antenna port, with

switch insertion loss included.

▪ RoHS Compliant & Pb-Free

* Including SPDT switch loss

APPLICATIONS

▪ IEEE 802.11b/g

▪ IEEE 802.11n MIMO

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

BLOCK DIAGRAM

Vref Vc

Ctl1 Ctl2

Internal

OMN*

TxIn

Det

Antenna

RxOut

*OMN: Output Matching Network

Rev. 1.1, 2019-06-24

Microsemi

Analog Mixed Signal Group

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 1

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中文翻译

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与LX5551LQ相关器件

型号	品牌	获取价格	描述	数据表
LX5551LQ-TR	MICROCHIP	获取价格	Narrow Band Low Power Amplifier
LX5552	MICROSEMI	获取价格	2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SPDT Switch
LX5552LU	MICROSEMI	获取价格	2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SPDT Switch
LX5553	MICROSEMI	获取价格	2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SP3T Switch
LX5553LU	MICROSEMI	获取价格	2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SP3T Switch
LX5553LU-TR	MICROSEMI	获取价格	2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SP3T Switch
LX5560	MICROSEMI	获取价格	InGaAs - E-Mode pHEMT Low Noise Amplifier
LX5560L	MICROSEMI	获取价格	InGaAs - E-Mode pHEMT Low Noise Amplifier
LX5560LL	MICROSEMI	获取价格	暂无描述
LX5560LL-TR	MICROSEMI	获取价格	Wide Band Low Power Amplifier, 4900MHz Min, 6000MHz Max, 1 Func, 2X2 MM, ROHS COMPLIANT, L

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