Datasheet > LNC704PS

LNC704PS

更新时间： 2024-10-17 22:31:11

品牌	Logo	应用领域
松下 - PANASONIC		半导体
页数	文件大小	规格书
2页	32K
描述
GaAlAs Semiconductor Laser

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中文翻译

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数据手册

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LNC704PS 数据手册

Semiconductor Laser

LNC704PS

GaAlAs Semiconductor Laser

ø5.6

Unit : mm

–0.025

ø4.3±0.1

ø3.55±0.1

ø1.0 min.

Features

Low threshold current

Junction plane

Reference plane

Reference slot

Stable single horizontal mode oscillation

Long lifetime, high reliability

1.0±0.1

Reference plane

Applications

Optical data processing devices

3-ø0.45

Optical disk memory

Optical measuring equipment

1: LD Anode

2: Common Case

3: PD Cathode

ø2.0

Bottom view

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Radiant power

Symbol

P_O

Ratings

Unit

Laser

V_R

Reverse voltage

V_R(PIN)

P_d(PIN)

T_opr

Power dissipation

100

˚C

Operating ambient temperature

Storage temperature

–10 to +60

– 40 to +80

T_stg

˚C

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Threshold current

Operating current

Operating voltage

Oscillation wavelength

Symbol

I_th

Conditions

min

typ

max

Unit

I_OP

CW P_O= 32mW

V_OP

λ_L

CW P_O= 32mW

2.0

785

2.5

805

CW P_O= 32mW

770

Horizontal direction

Vertical direction

θ_//

CW P_O= 32mW

deg.

W/A

µA

Radiation angle

CW P_O= 32mW

0.7

Differential efficiency

PIN photo current

CW P_O= 29mW/I(32mW – 3mW)

CW P_O= 32mW, V_R(PIN) = 5V

V_R(PIN) = 15V

0.9

0.4

1.2

I_P

Reverse current (DC)

I_R

θ_X

θ_Y

0.1

X direction

CW P_O= 32mW

–2.0

–3.0

+2.0

+3.0

deg.

Optical axis

accuracy

Y direction

CW P_O= 32mW

^*1The radiation angle is indicated as half full angle.

中文翻译

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