Datasheet > LNCQ10PS

LNCQ10PS

更新时间： 2024-10-17 23:47:35

品牌	Logo	应用领域
其他 - ETC		光电光电器件二极管
页数	文件大小	规格书
2页	60K
描述
Opto-Electronic Device - Light Emitting Diodes - Laser

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中文翻译

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数据手册

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LNCQ10PS 数据手册

Laser Diode

LNCQ10PS

AlGaInP-Red Laser Diode

Unit : mm

■ Features

φ2.0

• Oscillation wavelength: 657 nm

• Radiant power: 50 mW (with 140 mW pulse)

• Small package: φ5.6 mm

(2)

(3)

(1)

1.0

■ Applications

• DVD write/read

φ5.6

0.025

φ1.0

■ Absolute Maximum Ratings T_a= 25°C

Referance Plane

Parameter

Radiant power

Symbol

P_O

Rating

Unit

Pulse

Laser

3- φ0.45

P_O

140

1 : LD Anode

2 : Common Case

3 : PD Cathode

L5 Package

Reverse voltage

V_R

1.5

V_R(PIN)

P_D(PIN)

T_opr

Power dissipation

°C

Operating ambient temperature

Storage temperature

−10 to +70

−40 to +80

Internal Connection

T_stg

°C

■ Electro-Optical Characteristics T_a= 25°C 3°C

Parameter

Threshold current

Symbol

I_th

Conditions

Min

Typ

Max

Unit

Operating current

I_OP

V_OP

λ_L

CW, P_O= 50 mW

110

3.0

Operating voltage

2.0

2.5

657

1.00

9.0

Oscillation wavelength

Differential efficiency

Beam radiation angle Horizontal

Vertical

653

0.85

7.0

660

1.2

W/A

CW, P_O= 45/I_OP(50 mW) − I_OP(5 mW)

CW, P_O= 50 mW

θ_//

11.0

θ_⊥

Optical axis accuracy X direction

Y direction

θ_X

−1.5

−2.5



+1.5

+2.5

θ_Y



Astigmatism difference

Accuracy of emission point

CW, P_O= 3 mW

µm

∆

−60



+60

∆



∆



Publication date: November 2003

SHB00003AED

中文翻译

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