Datasheet > LND090A

LND090A

更新时间： 2024-10-19 12:00:31

品牌	Logo	应用领域
LINEAR_DIMENSIONS		晶体栅极开关晶体管双极性晶体管
页数	文件大小	规格书
2页	68K
描述
Revolutionary LF-MCTs Replace MOSFETs, Bipolars & IGBTs In Switching Apps with only 1.9nC Gate Charge

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LND090A 数据手册

PRELIMINARY DATA SHEET

LND090A/B/C/D

Revolutionary LF-MCTs Replace

MOSFETs, Bipolars & IGBTs In Switching

Apps with only 1.9nC Gate Charge

GENERAL DESCRIPTION

FEATURES

Linear Dimensions introduces the revolutionary Linear Fast

MCT (LF-MCT). A Linear Dimensions proprietary MCT

construction (PATENTS PENDING) allows LF-MCTs for the

first time to be used in fast switching applications where

MOSFETs, bipolars & IGBTs are more commonly used.



600V/1500V anode to cathode voltage

Off leakage 30% of equivalent MOSFET

High impedance MOSFET-like gate

Vg=+/- 5V gate drive, pulsed OK

Turn off current:

LF-MCTs represent the highest current density of any

switching pass element. In the past MCTs have had

switching times in the 800ns+ range and been focused on

high current applications. Linear Dimensions brings LF-

MCTs to high frequency offline AC/DC and DC/DC switching

applications with turn on times of <30ns and turn off times of

<200ns (600V devices).



1A & 3A LF-MCTs (A,B)

10A & 40A LF-MCTs (C,D)



Low gate capacitance ~ 380pF

Ultra fast rise times ~ 17ns

Sub ~200ns fall times

Silicon area reduced to as little as 30% of the

silicon of a MOSFET with equivalent Vf

In AC/DC offline applications such as offline flyback

converters or switching LED drivers, LF-MCTs require 1/3 the

drive current of the MOSFETs typically used. Additionally,

LF-MCTs require 1/3 to 1/8^ththe silicon area of a MOSFET

for a similar voltage drop at rated current saving space and

cost.



Up to 10x the peak current capability of an

equivalent MOSFET

>40% lower forward Vf drop than IGBTs (1.3-1.6V

vs. ~2.2V for IGBT)

High current density >> 300 Amp Peak

Fast LF-MCTs can be used as a replacement for IGBTs

where they have a Vf that is as much as 40% lower than a

typical IGBTs.



Lead free RoHS compliant TO-252 PKG

Also available as bare die

Although Fast LF-MCTs must be driven with a +/- gate

voltage, the small current requirement allows the negative

voltage to be generated from the output of a typical switching

gate drive. Additionally, a positive or negative pulse will latch

them on or off and a continuous voltage is not required.

APPLICATIONS



Crowbar protection circuits

High-voltage surge suppressors

Uninterruptible Power Supplies

Capacitor discharge safety switches

White Goods, Rice Cookers

AC/DC Flyback Converters

DC/DC Switching Applications

Resonant switching

The LND090 are packaged in lead free TO-252 packages or

available as bare die.

PASS ELEMENT CURRENT DENSITY

COMPARISON OF600V DEVICESWITH

LESSTHAN 1 usTURN-OFFTIME

N-MCT

P-MCT

Plasma Televisions

1000

Camera Strobe

N-IGBT

100

PACKAGE & SYMBOL

DARLINGTON

N-MOSFET

TEMPERATURE: 25C

CELL SIZE: 35 um

1.0

0.5

1.0

1.5

2.0

2.5

FORWARD DROP (VOLTS)

Modelled Forward Drop Comparison

of MOSGated Power Devices

D-Pak

LF-MCT

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