生命周期: | Transferred | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.62 |
配置: | SINGLE WITH BUILT-IN DIODE | 最大漏极电流 (ID): | 0.03 A |
最大漏源导通电阻: | 1000 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 1 pF | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | N-CHANNEL |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
LND150N3-GP005 | SUPERTEX |
获取价格 |
N-Channel Depletion-Mode DMOS FET | |
LND150N3GP013 | MICROCHIP |
获取价格 |
N-Channel Depletion-Mode DMOS FETs | |
LND150N3-GP013 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Metal-oxi | |
LND150N3GP014 | MICROCHIP |
获取价格 |
N-Channel Depletion-Mode DMOS FETs | |
LND150N3-GP014 | SUPERTEX |
获取价格 |
N-Channel Depletion-Mode DMOS FET | |
LND150N8 | SUPERTEX |
获取价格 |
N-Channel Depletion-Mode MOSFET | |
LND150N8-G | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.03A I(D), 500V, 1-Element, N-Channel, Silicon, Met | |
LND150N8GP002 | MICROCHIP |
获取价格 |
N-Channel Depletion-Mode DMOS FETs | |
LND150N8GP003 | MICROCHIP |
获取价格 |
N-Channel Depletion-Mode DMOS FETs | |
LND150N8GP013 | MICROCHIP |
获取价格 |
N-Channel Depletion-Mode DMOS FETs |