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LND150ND PDF预览

LND150ND

更新时间: 2024-10-18 22:31:11
品牌 Logo 应用领域
超科 - SUPERTEX /
页数 文件大小 规格书
4页 89K
描述
N-Channel Depletion-Mode MOSFET

LND150ND 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:DIE
包装说明:UNCASED CHIP, X-XUUC-NReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.68
其他特性:HIGH INPUT IMPEDANCE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):0.03 A
最大漏源导通电阻:1000 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):1 pFJESD-30 代码:X-XUUC-N
JESD-609代码:e0元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:UNSPECIFIED封装形式:UNCASED CHIP
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:TIN LEAD
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

LND150ND 数据手册

 浏览型号LND150ND的Datasheet PDF文件第2页浏览型号LND150ND的Datasheet PDF文件第3页浏览型号LND150ND的Datasheet PDF文件第4页 
LND150  
N-Channel Depletion-Mode  
MOSFET  
Ordering Information  
Product marking for TO-243AA:  
Order Number / Package  
TO-243AA*  
BVDSX  
/
RDS(ON)  
(max)  
IDSS  
(min)  
BVDGX  
TO-92  
Die  
LN1E❋  
Where = 2-week alpha date code  
500V  
1.0K  
1.0mA  
LND150N3  
LND150N8  
LND150ND  
* Same as SOT-89. Product shipped on 2000 piece carrier tape reels.  
Features  
Advanced DMOS Technology  
ESD gate protection  
TheLND1isahighvoltageN-channeldepletionmode(normally-  
on) transistor utilizing Supertex’s lateral DMOS technology. The  
gate is ESD protected.  
Free from secondary breakdown  
Low power drive requirement  
Ease of paralleling  
The LND1 is ideal for high voltage applications in the areas of  
normally-on switches, precision constant current sources, volt-  
age ramp generation and amplification.  
Excellent thermal stability  
Integral source-drain diode  
High input impedance and low CISS  
Package Options  
Applications  
Solid state relays  
Normally-on switches  
Converters  
Power supply circuits  
Constant current sources  
Input protection circuits  
S
G
S
D
S G D  
TO-243AA  
TO-92  
(SOT-89)  
Absolute Maximum Ratings  
Drain-to-Source Voltage  
BVDSX  
BVDGX  
±20V  
Drain-to-Gate Voltage  
Gate-to-Source Voltage  
Operating and Storage Temperature  
-55°C to +150°C  
Soldering Temperature*  
* Distance of 1.6 mm from case for 10 seconds.  
300°C  
Note: See Package Outline section for dimensions.  
12/13/01  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  

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