是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Transferred | 零件包装代码: | DIE |
包装说明: | UNCASED CHIP, X-XUUC-N | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.68 |
其他特性: | HIGH INPUT IMPEDANCE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (ID): | 0.03 A |
最大漏源导通电阻: | 1000 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 1 pF | JESD-30 代码: | X-XUUC-N |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | UNSPECIFIED | 封装形式: | UNCASED CHIP |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | NO LEAD | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
LND1937 | LINEAR_DIMENSIONS |
获取价格 |
36V BOOST DC/DC LED DRIVER | |
LND250 | SUPERTEX |
获取价格 |
N-Channel Depletion-Mode MOSFET | |
LND250 | MICROCHIP |
获取价格 |
The LND250 is a high voltage N-channel depletion mode (normally-on) transistor utilizing | |
LND250K1 | SUPERTEX |
获取价格 |
N-Channel Depletion-Mode MOSFET | |
LND250K1-G | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.013A I(D), 1-Element, N-Channel, Silicon, Metal-ox | |
LND250K1GP002 | MICROCHIP |
获取价格 |
N-Channel Depletion-Mode DMOS FETs | |
LND250K1GP003 | MICROCHIP |
获取价格 |
N-Channel Depletion-Mode DMOS FETs | |
LND250K1GP013 | MICROCHIP |
获取价格 |
N-Channel Depletion-Mode DMOS FETs | |
LND250K1GP014 | MICROCHIP |
获取价格 |
N-Channel Depletion-Mode DMOS FETs | |
LND250N3GP002 | MICROCHIP |
获取价格 |
N-Channel Depletion-Mode DMOS FETs |