Datasheet > LND250K1GP014

LND250K1GP014

更新时间： 2024-10-20 02:47:55

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
16页	580K
描述
N-Channel Depletion-Mode DMOS FETs

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数据手册

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LND250K1GP014 数据手册

LND150/LND250

N-Channel Depletion-Mode DMOS FETs

Features

General Description

The LND150 and LND250 are high-voltage N-channel

Depletion-mode (normally-on) transistors utilizing

lateral DMOS technology. The gate is ESD protected.

• Free from Secondary Breakdown

• Low-Power Drive Requirement

• Ease of Paralleling

The LND150/LND250 are ideal for high-voltage appli-

cations, such as normally-on switches, precision

constant-current sources, voltage-ramp generation

and amplification.

• Excellent Thermal Stability

• Integral Source-Drain Diode

• High Input Impedance and Low C_ISS

• ESD Gate Protection

Applications

• Solid-State Relays

• Normally-On Switches

• Converters

• Power Supply Circuits

• Constant-Current Sources

• Input Protection Circuits

Package Types

3-lead TO-92

3-lead SOT-89

3-lead SOT-23

(Top view)

SOURCE

DRAIN

SOURCE

DRAIN

SOURCE

GATE

See Table 3-1, Table 3-2 and Table 3-3 for pin information.

 2018 Microchip Technology Inc.

DS20005454A-page 1

12 3 4 5 6 7...16

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