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LND01 PDF预览

LND01

更新时间: 2024-10-19 14:51:47
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
12页 538K
描述
The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced latera

LND01 数据手册

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LND01  
Lateral N-Channel Depletion-Mode MOSFET  
Features  
General Description  
• Bi-directional  
The LND01 is a low-threshold, Depletion-mode  
(normally-on) transistor that uses an advanced lateral  
DMOS structure and a well-proven silicon gate  
manufacturing process. This combination produces a  
device with the power handling capabilities of bipolar  
transistors as well as the high input impedance and  
• Low On-resistance  
• Low Input Capacitance  
• Fast Switching Speeds  
• High Input Impedance and High Gain  
• Low Power Drive Requirement  
• Ease of Paralleling  
positive  
temperature  
coefficient  
inherent  
in  
MOS devices. Characteristic of all MOS structures, this  
device is free from thermal runaway and thermally  
induced secondary breakdown.  
Applications  
The body of the transistor is connected to the gate pin.  
The channel is therefore being pinched off by both the  
gate and body. The gate pin has a diode connected to  
the drain terminal and another diode connected to the  
source terminal.  
• Normally-on Switches  
• Solid-state Relays  
• Converters  
• Constant Current Sources  
• Analog Switches  
Package Type  
5-lead SOT-23  
DRAIN  
SOURCE  
N/C  
GATE  
N/C  
See Table 2-1 for pin information.  
2017 Microchip Technology Inc.  
DS20005696A-page 1  

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