Semiconductor Laser
LNC803PS
High Power Output Semiconductor Laser
+0
ø5.6
Unit : mm
–0.025
ø4.3±0.1
2
Overview
ø3.55±0.1
The LNC803PS is a GaAlAs laser diode which provides stable,
continuous, single mode oscillation of near infrared light at room
temperature. This product can be used in a wide range of light source
applications, including laser printers, facsimiles, optical disk memory,
and optical information devices.
ø1.0 min.
LD
PD
3
1
Junction plane
Reference plane
1.0±0.1
Reference slot
Kovar glass
LD pellet
Features
Low threshold oscillation
Reference plane
ø1.2max.
3-ø0.45
Stable single horizontal mode oscillation
Built-in PIN photodiode for light output monitors
Light output is continuously variable as far as 60 mW
Supports direct modulation
2
1
3
1: LD Anode
2: Common Case
3: PD Cathode
ø2.0
Near infrared oscillating wavelength
Long lifetime, high reliability
Bottom view
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Radiant power
Symbol
PO
Ratings
40
Unit
mW
V
Laser
PIN
VR
1.5
Reverse voltage
VR (PIN)
Pd (PIN)
Topr
30
V
Power dissipation
100
mW
˚C
Operating ambient temperature
Storage temperature
–10 to +60
– 40 to +80
Tstg
˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Threshold current
Operating current
Operating voltage
Oscillation wavelength
Symbol
Ith
Conditions
min
10
typ
25
max
Unit
mA
CW
40
90
IOP
PO = 32mW
30
50
mA
VOP
PO = 32mW
2.0
830
10
3.0
845
13
V
λL
PO = 32mW
815
7
nm
*
Horizontal direction
Vertical direction
θ//
PO =32mW
deg.
deg.
mW/mA
µA
Radiation angle
*
θ
PO = 32mW
18
0.6
25
28
Differential efficiency
Reverse current (DC)
PIN photo current
η
CW PO = 28mW/I(30mW – 4mW)
VR (PIN) = 5V
PO = 32mW, VR (PIN) = 5V
PO = 32mW
1.0
1.5
0.1
IR
IP
mA
X direction
Y direction
θX
θY
–2.0
–3.0
+2.0
+3.0
deg.
deg.
Optical axis
accuracy
PO = 32mW
Oscillation mode
Single horizontal mode
*
θ// and θ are the angles where the optical intencity is a half of its max. value.( half full angle )
1