Datasheet > LN60A01ES

LN60A01ES

更新时间： 2024-10-21 01:15:19

品牌	Logo	应用领域
芯源 - MPS		栅
页数	文件大小	规格书
7页	238K
描述
600V, Triple N-Channel MOSFET with Common Gate Control

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LN60A01ES 数据手册

LN60A01

600V, Triple N-Channel MOSFET

with Common Gate Control

The Future of Analog IC Technology

DESCRIPTION

FEATURES

•

600V Breakdown Voltage

Three N-Channel MOSFETs

One Gate control to All Three FETs

Rds(on)=200Ω at Vgs=10V

Switching Current>0.1A

Fast Switching

The LN60A01 is a three channel, 600V N-

Channel, enhancement mode power FET

manufactured in MPS's proprietary, high-

voltage DMOS technology.

This advanced technology has been especially

tailored to minimize the on-state resistance,

provide superior switching performance, and

withstand high energy pulses in the avalanche

and commutation modes. This device is well

suited for high efficiency switched mode power

supplies and active power factor correction.

APPLICATIONS

•

High Efficiency AC/DC Adaptor

Offline Switching Power Supply

Active Power Factor Correction

“MPS” and “The Future of Analog IC Technology” are Registered Trademarks

of Monolithic Power Systems, Inc.

The LN60A01 is available in PDIP8 and SOIC8

package.

TYPICAL APPLICATION

400V

470k

Gate

CC3

CC1

CC2

LN60A01EP Rev. 0.91

1/15/2010

www.MonolithicPower.com

MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.

12 3 4 5 6 7

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