Datasheet > LN59-LNA2702L

LN59-LNA2702L

更新时间： 2024-10-19 22:26:03

品牌	Logo	应用领域
松下 - PANASONIC		二极管
页数	文件大小	规格书
2页	50K
描述
GaAs Bi-directional Infrared Light Emitting Diodes

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中文翻译

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数据手册

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LN59-LNA2702L 数据手册

Infrared Light Emitting Diodes

LN59, LNA2702L

GaAs Bi-directional Infrared Light Emitting Diodes

Unit : mm

LN59

4.0±0.2

1.8±0.2

For light source of VCR (VHS System)

ø2.5±0.2

2-R1.25±0.1

Features

Two-way directivity

High-power output, high-efficiency : P_O= 1.8 mW (min.)

Small resin package

2-0.8 max.

2-0.5±0.1

0.5±0.1

Long lifetime, high reliability

2.54

Long lead wire type (LNA2702L)

C0.5

1: Anode

2: Cathode

Applications

Light source for tape end sensor of VCR and video camera

recorder of VHS system

LNA2702L

1.8±0.2

4.0±0.2

ø2.5±0.2

Light source for 2-bit photo sensor

2-R1.25±0.1

Absolute Maximum Ratings (Ta = 25˚C)

2-0.8 max.

2-0.5±0.1

2-0.7 max.

Parameter

Symbol

Ratings

Unit

0.5±0.1

Power dissipation

P_D

Forward current (DC)

Pulse forward current

Reverse voltage (DC)

Operating ambient temperature

Storage temperature

I_F

I_FP

V_R

T_opr

T_stg

2-0.5±0.1

–25 to +85

– 40 to +100

˚C

2.54

˚C

C0.5

f = 100 Hz, Duty cycle = 0.1 %

1: Anode

2: Cathode

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Radiant power

Symbol

Conditions

min

typ

max

Unit

P_O

I_F= 50mA

1.8

Peak emission wavelength

Spectral half band width

Forward voltage (DC)

Reverse current (DC)

Capacitance between pins

λ_P

∆λ

V_F

I_R

I_F= 20mA

950

I_F= 20mA

I_F= 50mA

1.3

1.5

V_R= 3V

µA

C_t

V_R= 0V, f = 1MHz

^*Radiant power P_Oshows each value of radiant flux P1 and P2 in two directions.

P1 P2

中文翻译

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