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LMG3422R030 PDF预览

LMG3422R030

更新时间: 2024-11-18 02:50:55
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德州仪器 - TI /
页数 文件大小 规格书
45页 1835K
描述
LMG342xR030 600-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

LMG3422R030 数据手册

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LMG3422R030, LMG3425R030  
SNOSDA7C – AUGUST 2020 – REVISED DECEMBER 2021  
LMG342xR030 600-V 30-mΩ GaN FET With Integrated Driver, Protection, and  
Temperature Reporting  
1 Features  
3 Description  
Qualified for JEDEC JEP180 for hard-switching  
topologies  
600-V GaN-on-Si FET with Integrated gate driver  
– Integrated high precision gate bias voltage  
– 200-V/ns CMTI  
The LMG342xR030 GaN FET with integrated driver  
and protection enables designers to achieve new  
levels of power density and efficiency in power  
electronics systems.  
The LMG342xR030 integrates a silicon driver that  
enables switching speed up to 150 V/ns. TI’s  
integrated precision gate bias results in higher  
switching SOA compared to discrete silicon gate  
drivers. This integration, combined with TI's low-  
inductance package, delivers clean switching and  
minimal ringing in hard-switching power supply  
topologies. Adjustable gate drive strength allows  
control of the slew rate from 20 V/ns to 150 V/ns,  
which can be used to actively control EMI and  
optimize switching performance. The LMG3425R030  
includes ideal diode mode, which reduces third-  
quadrant losses by enabling adaptive dead-time  
control.  
– 2.2-MHz switching frequency  
– 30-V/ns to 150-V/ns slew rate for optimization  
of switching performance and EMI mitigation  
– Operates from 7.5-V to 18-V supply  
Robust protection  
– Cycle-by-cycle overcurrent and latched short-  
circuit protection with < 100-ns response  
– Withstands 720-V surge while hard-switching  
– Self-protection from internal overtemperature  
and UVLO monitoring  
Advanced power management  
– Digital temperature PWM output  
– Ideal diode mode reduces third-quadrant losses  
in LMG3425R030  
Advanced power management features include digital  
temperature reporting and fault detection. The  
temperature of the GaN FET is reported through  
a variable duty cycle PWM output, which simplifies  
managing device loading. Faults reported include  
overtemperature, overcurrent, and UVLO monitoring.  
2 Applications  
High density industrial power supplies  
Solar inverters and industrial motor drives  
Uninterruptable power supplies  
Merchant network and server PSU  
Merchant telecom rectifiers  
Device Information  
PART NUMBER  
LMG3422R030  
PACKAGE (1)  
BODY SIZE (NOM)  
VQFN (54)  
12.00 mm × 12.00 mm  
LMG3425R030 (2)  
(1) For all available packages, see the orderable addendum at  
the end of the data sheet.  
(2) Device is ADVANCE INFORMATION.  
DRAIN  
Direct-Drive  
Slew  
GaN  
Rate  
SOURCE  
RDRV  
IN  
VDD  
VNEG  
LDO,  
BB  
OCP, SCP,  
OTP, UVLO  
Current  
LDO5V  
TEMP  
FAULT  
OC  
SOURCE  
Simplified Block Diagram  
Switching Performance at > 100 V/ns  
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. UNLESS OTHERWISE NOTED, this document contains PRODUCTION  
DATA.  
 
 
 
 

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