Datasheet > LMG3422R030RQZR

LMG3422R030RQZR

更新时间： 2024-12-01 02:50:55

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德州仪器 - TI		/
页数	文件大小	规格书
45页	1835K
描述
LMG342xR030 600-V 30-mÎ© GaN FET With Integrated Driver, Protection, and Temperature Reporting

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LMG3422R030RQZR 数据手册

LMG3422R030, LMG3425R030

SNOSDA7C – AUGUST 2020 – REVISED DECEMBER 2021

LMG342xR030 600-V 30-mΩ GaN FET With Integrated Driver, Protection, and

Temperature Reporting

1 Features

3 Description

•

Qualified for JEDEC JEP180 for hard-switching

topologies

600-V GaN-on-Si FET with Integrated gate driver

– Integrated high precision gate bias voltage

– 200-V/ns CMTI

The LMG342xR030 GaN FET with integrated driver

and protection enables designers to achieve new

levels of power density and efficiency in power

electronics systems.

•

The LMG342xR030 integrates a silicon driver that

enables switching speed up to 150 V/ns. TI’s

integrated precision gate bias results in higher

switching SOA compared to discrete silicon gate

drivers. This integration, combined with TI's low-

inductance package, delivers clean switching and

minimal ringing in hard-switching power supply

topologies. Adjustable gate drive strength allows

control of the slew rate from 20 V/ns to 150 V/ns,

which can be used to actively control EMI and

optimize switching performance. The LMG3425R030

includes ideal diode mode, which reduces third-

quadrant losses by enabling adaptive dead-time

control.

– 2.2-MHz switching frequency

– 30-V/ns to 150-V/ns slew rate for optimization

of switching performance and EMI mitigation

– Operates from 7.5-V to 18-V supply

Robust protection

– Cycle-by-cycle overcurrent and latched short-

circuit protection with < 100-ns response

– Withstands 720-V surge while hard-switching

– Self-protection from internal overtemperature

and UVLO monitoring

•

Advanced power management

– Digital temperature PWM output

– Ideal diode mode reduces third-quadrant losses

in LMG3425R030

Advanced power management features include digital

temperature reporting and fault detection. The

temperature of the GaN FET is reported through

a variable duty cycle PWM output, which simplifies

managing device loading. Faults reported include

overtemperature, overcurrent, and UVLO monitoring.

2 Applications

•

High density industrial power supplies

Solar inverters and industrial motor drives

Uninterruptable power supplies

Merchant network and server PSU

Merchant telecom rectifiers

Device Information

PART NUMBER

LMG3422R030

PACKAGE ⁽¹⁾

BODY SIZE (NOM)

VQFN (54)

12.00 mm × 12.00 mm

LMG3425R030 ⁽²⁾

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

(2) Device is ADVANCE INFORMATION.

DRAIN

Direct-Drive

Slew

GaN

Rate

SOURCE

RDRV

VDD

VNEG

LDO,

OCP, SCP,

OTP, UVLO

Current

LDO5V

TEMP

FAULT

SOURCE

Simplified Block Diagram

Switching Performance at > 100 V/ns

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. UNLESS OTHERWISE NOTED, this document contains PRODUCTION

DATA.

12 3 4 5 6 7...45

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与LMG3422R030RQZR相关器件

型号	品牌	获取价格	描述	数据表
LMG3422R030RQZT	TI	获取价格	LMG342xR030 600-V 30-mÎ© GaN FET With Integra
LMG3422R050	TI	获取价格	具有集成驱动器、保护和温度报告功能的 600V 50mΩ GaN FET
LMG3422R050RQZR	TI	获取价格	具有集成驱动器、保护和温度报告功能的 600V 50mΩ GaN FET \| RQZ \|
LMG3422R050RQZT	TI	获取价格	具有集成驱动器、保护和温度报告功能的 600V 50mΩ GaN FET \| RQZ \|
LMG3425R030	TI	获取价格	LMG342xR030 600-V 30-mÎ© GaN FET With Integra
LMG3426R030	TI	获取价格	具有集成驱动器、保护和零电压检测功能的 600V 30mΩ GaN FET
LMG3426R030RQZR	TI	获取价格	具有集成驱动器、保护和零电压检测功能的 600V 30mΩ GaN FET
LMG3426R030RQZT	TI	获取价格	具有集成驱动器、保护和零电压检测功能的 600V 30mΩ GaN FET
LMG3426R050	TI	获取价格	具有集成驱动器、保护和零电压检测功能的 600V 50m? GaN FET
LMG3426R050RQZR	TI	获取价格	具有集成驱动器、保护和零电压检测功能的 600V 50mΩ GaN FET

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