Datasheet > LMG3426R030

LMG3426R030

更新时间： 2024-11-20 17:15:19

品牌	Logo	应用领域
德州仪器 - TI		驱动驱动器
页数	文件大小	规格书
55页	2791K
描述
具有集成驱动器、保护和零电压检测功能的 600V 30mΩ GaN FET

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LMG3426R030 数据手册

LMG3422R030, LMG3426R030

SNOSDA7E – SEPTEMBER 2020 – REVISED FEBRUARY 2024

LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and

Temperature Reporting

1 Features

3 Description

•

Qualified for JEDEC JEP180 for hard-switching

topologies

600V GaN-on-Si FET with integrated gate driver

– Integrated high precision gate bias voltage

– 200V/ns FET hold-off

The LMG342xR030 GaN FET with integrated driver

and protection is targeted at switch-mode power

converters and enables designers to achieve new

levels of power density and efficiency.

•

The LMG342xR030 integrates a silicon driver that

enables switching speed up to 150V/ns. TI’s

integrated precision gate bias results in higher

switching SOA compared to discrete silicon gate

drivers. This integration, combined with TI's low-

inductance package, delivers clean switching and

minimal ringing in hard-switching power supply

topologies. Adjustable gate drive strength allows

control of the slew rate from 20V/ns to 150V/ns,

which can be used to actively control EMI and

optimize switching performance. The LMG3426R030

includes the zero-voltage detection (ZVD) feature

which provides a pulse output from the ZVD pin when

zero-voltage switching is realized.

– 2.2MHz switching frequency

– 20V/ns to 150V/ns slew rate for optimization of

switching performance and EMI mitigation

– Operates from 7.5V to 18V supply

Robust protection

– Cycle-by-cycle overcurrent and latched short-

circuit protection with < 100ns response

– Withstands 720V surge while hard-switching

– Self-protection from internal overtemperature

and UVLO monitoring

•

Advanced power management

– Digital temperature PWM output

– LMG3426R030 includes zero-voltage detection

(ZVD) feature that facilitates soft-switching

converters

Advanced power management features include

digital temperature reporting and fault detection.

The temperature of the GaN FET is reported

through a variable duty cycle PWM output, which

simplifies managing device loading. Faults reported

include overcurrent, short-circuit, overtemperature,

VDD UVLO, and high-impedance RDRV pin.

2 Applications

•

Switch-mode power converters

Merchant network and server PSU

Merchant telecom rectifiers

Solar inverters and industrial motor drives

Uninterruptible power supplies

Package Information

PART NUMBER

LMG3422R030

LMG3426R030

PACKAGE⁽¹⁾

PACKAGE SIZE⁽²⁾

DRAIN

RQZ (VQFN, 54) 12.00mm × 12.00mm

Direct-Drive

Slew

GaN

Rate

SOURCE

RDRV

(1) For more information, see the Mechanical, Packaging, and

Orderable Information section.

(2) The package size (length × width) is a nominal value and

includes pins, where applicable.

VDD

VNEG

Device Information

LDO,

OCP, SCP,

OTP, UVLO

Current

LDO5V

TEMP

ZERO-VOLTAGE

DETECTION FEATURE

PART NUMBER

LMG3422R030

LMG3426R030

—

Yes

FAULT

OC or ZVD

SOURCE

Simplified Block Diagram

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

12 3 4 5 6 7...55

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与LMG3426R030相关器件

型号	品牌	获取价格	描述	数据表
LMG3426R030RQZR	TI	获取价格	具有集成驱动器、保护和零电压检测功能的 600V 30mΩ GaN FET
LMG3426R030RQZT	TI	获取价格	具有集成驱动器、保护和零电压检测功能的 600V 30mΩ GaN FET
LMG3426R050	TI	获取价格	具有集成驱动器、保护和零电压检测功能的 600V 50m? GaN FET
LMG3426R050RQZR	TI	获取价格	具有集成驱动器、保护和零电压检测功能的 600V 50mΩ GaN FET
LMG3426R050RQZT	TI	获取价格	具有集成驱动器、保护和零电压检测功能的 600V 50mΩ GaN FET
LMG342XR030	TI	获取价格	LMG342xR030 600-V 30-mÎ© GaN FET With Integra
LMG3522R030	TI	获取价格	具有集成驱动器、保护和温度报告功能的 650V 30mΩ GaN FET
LMG3522R030-Q1	TI	获取价格	具有集成驱动器、保护和温度报告功能的汽车类 650V 30mΩ GaN FET
LMG3522R030RQSR	TI	获取价格	具有集成驱动器、保护和温度报告功能的 650V 30mΩ GaN FET \| RQS \|
LMG3522R030RQST	TI	获取价格	具有集成驱动器、保护和温度报告功能的 650V 30mΩ GaN FET \| RQS \|

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