Datasheet > LMG342XR030

LMG342XR030

更新时间： 2024-11-21 02:50:55

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德州仪器 - TI		/
页数	文件大小	规格书
45页	1835K
描述
LMG342xR030 600-V 30-mÎ© GaN FET With Integrated Driver, Protection, and Temperature Reporting

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LMG342XR030 数据手册

LMG3422R030, LMG3425R030

SNOSDA7C – AUGUST 2020 – REVISED DECEMBER 2021

LMG342xR030 600-V 30-mΩ GaN FET With Integrated Driver, Protection, and

Temperature Reporting

1 Features

3 Description

•

Qualified for JEDEC JEP180 for hard-switching

topologies

600-V GaN-on-Si FET with Integrated gate driver

– Integrated high precision gate bias voltage

– 200-V/ns CMTI

The LMG342xR030 GaN FET with integrated driver

and protection enables designers to achieve new

levels of power density and efficiency in power

electronics systems.

•

The LMG342xR030 integrates a silicon driver that

enables switching speed up to 150 V/ns. TI’s

integrated precision gate bias results in higher

switching SOA compared to discrete silicon gate

drivers. This integration, combined with TI's low-

inductance package, delivers clean switching and

minimal ringing in hard-switching power supply

topologies. Adjustable gate drive strength allows

control of the slew rate from 20 V/ns to 150 V/ns,

which can be used to actively control EMI and

optimize switching performance. The LMG3425R030

includes ideal diode mode, which reduces third-

quadrant losses by enabling adaptive dead-time

control.

– 2.2-MHz switching frequency

– 30-V/ns to 150-V/ns slew rate for optimization

of switching performance and EMI mitigation

– Operates from 7.5-V to 18-V supply

Robust protection

– Cycle-by-cycle overcurrent and latched short-

circuit protection with < 100-ns response

– Withstands 720-V surge while hard-switching

– Self-protection from internal overtemperature

and UVLO monitoring

•

Advanced power management

– Digital temperature PWM output

– Ideal diode mode reduces third-quadrant losses

in LMG3425R030

Advanced power management features include digital

temperature reporting and fault detection. The

temperature of the GaN FET is reported through

a variable duty cycle PWM output, which simplifies

managing device loading. Faults reported include

overtemperature, overcurrent, and UVLO monitoring.

2 Applications

•

High density industrial power supplies

Solar inverters and industrial motor drives

Uninterruptable power supplies

Merchant network and server PSU

Merchant telecom rectifiers

Device Information

PART NUMBER

LMG3422R030

PACKAGE ⁽¹⁾

BODY SIZE (NOM)

VQFN (54)

12.00 mm × 12.00 mm

LMG3425R030 ⁽²⁾

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

(2) Device is ADVANCE INFORMATION.

DRAIN

Direct-Drive

Slew

GaN

Rate

SOURCE

RDRV

VDD

VNEG

LDO,

OCP, SCP,

OTP, UVLO

Current

LDO5V

TEMP

FAULT

SOURCE

Simplified Block Diagram

Switching Performance at > 100 V/ns

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. UNLESS OTHERWISE NOTED, this document contains PRODUCTION

DATA.

12 3 4 5 6 7...45

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与LMG342XR030相关器件

型号	品牌	获取价格	描述	数据表
LMG3522R030	TI	获取价格	具有集成驱动器、保护和温度报告功能的 650V 30mΩ GaN FET
LMG3522R030-Q1	TI	获取价格	具有集成驱动器、保护和温度报告功能的汽车类 650V 30mΩ GaN FET
LMG3522R030RQSR	TI	获取价格	具有集成驱动器、保护和温度报告功能的 650V 30mΩ GaN FET \| RQS \|
LMG3522R030RQST	TI	获取价格	具有集成驱动器、保护和温度报告功能的 650V 30mΩ GaN FET \| RQS \|
LMG3522R050	TI	获取价格	具有集成驱动器、保护和温度报告功能的 650V 50m? GaN FET
LMG3522R050RQSR	TI	获取价格	具有集成驱动器、保护和温度报告功能的 650V 50mΩ GaN FET \|
LMG3522R050RQST	TI	获取价格	具有集成驱动器、保护和温度报告功能的 650V 50mΩ GaN FET \|
LMG3526R030	TI	获取价格	具有集成驱动器、保护和零电压检测功能的 650V 30mΩ GaN FET
LMG3526R030RQSR	TI	获取价格	具有集成驱动器、保护和零电压检测功能的 650V 30mΩ GaN FET \| RQS \|
LMG3526R030RQST	TI	获取价格	具有集成驱动器、保护和零电压检测功能的 650V 30mΩ GaN FET \| RQS \|

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