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LF353DR2 PDF预览

LF353DR2

更新时间: 2024-11-04 14:52:03
品牌 Logo 应用领域
安森美 - ONSEMI 放大器光电二极管
页数 文件大小 规格书
4页 101K
描述
DUAL OP-AMP, 13000uV OFFSET-MAX, 4MHz BAND WIDTH, PDSO8, PLASTIC, SO-8

LF353DR2 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:PLASTIC, SO-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.68Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.008 µA25C 时的最大偏置电流 (IIB):0.0002 µA
标称共模抑制比:100 dB频率补偿:YES
最大输入失调电流 (IIO):0.004 µA最大输入失调电压:13000 µV
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.9 mm低-偏置:YES
低-失调:NO负供电电压上限:-18 V
标称负供电电压 (Vsup):-15 V功能数量:2
端子数量:8最高工作温度:70 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TAPE AND REEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:+-15 V认证状态:Not Qualified
座面最大高度:1.75 mm标称压摆率:13 V/us
子类别:Operational Amplifier供电电压上限:18 V
标称供电电压 (Vsup):15 V表面贴装:YES
技术:JFET温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:4000 kHz
宽度:3.9 mmBase Number Matches:1

LF353DR2 数据手册

 浏览型号LF353DR2的Datasheet PDF文件第2页浏览型号LF353DR2的Datasheet PDF文件第3页浏览型号LF353DR2的Datasheet PDF文件第4页 
Order this document by LF347/D  
FAMILY OF JFET  
OPERATIONAL AMPLIFIERS  
These low cost JFET input operational amplifiers combine two  
state–of–the–art analog technologies on a single monolithic integrated  
circuit. Each internally compensated operational amplifier has well matched  
high voltage JFET input devices for low input offset voltage. The JFET  
technology provides wide bandwidths and fast slew rates with low input bias  
currents, input offset currents, and supply currents.  
N SUFFIX  
PLASTIC PACKAGE  
These devices are available in single, dual and quad operational  
amplifiers which are pin–compatible with the industry standard MC1741,  
MC1458, and the MC3403/LM324 bipolar devices.  
CASE 626  
8
1
D SUFFIX  
Input Offset Voltage of 5.0 mV Max (LF347B)  
Low Input Bias Current: 50 pA  
PLASTIC PACKAGE  
CASE 751  
(SO–8)  
8
1
Low Input Noise Voltage: 16 nV/ Hz  
Wide Gain Bandwidth: 4.0 MHz  
High Slew Rate: 13V/µs  
PIN CONNECTIONS  
Offset Null  
1
2
3
4
8
7
6
5
NC  
V
Invt Input  
+
CC  
Low Supply Current: 1.8 mA per Amplifier  
LF351  
Noninvt Input  
Output  
(Top View)  
12  
High Input Impedance: 10  
Offset Null  
V
EE  
High Common Mode and Supply Voltage Rejection Ratios: 100 dB  
Output A  
Inputs A  
V
1
2
3
4
8
7
6
5
CC  
+
Output B  
LF353  
(Top View)  
A
Inputs B  
B
V
EE  
+
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Supply Voltage  
V
V
+18  
–18  
V
CC  
EE  
N SUFFIX  
PLASTIC PACKAGE  
CASE 646  
Differential Input Voltage  
V
±30  
±15  
V
V
ID  
14  
Input Voltage Range (Note 1)  
Output Short Circuit Duration (Note 2)  
V
t
IDR  
1
Continuous  
PIN CONNECTIONS  
SC  
Power Dissipation at T = +25°C  
P
1/  
θJA  
900  
10  
mW  
mW/°C  
A
D
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
Out 1  
Out 4  
Derate above T =+25°C  
A
Operating Ambient Temperature Range  
Operating Junction Temperature Range  
Storage Temperature Range  
T
A
0 to +70  
115  
°C  
°C  
°C  
Inputs 1  
Inputs 4  
1
4
3
+
+
+
T
J
V
V
CC  
EE  
T
stg  
– 65 to  
+150  
+
Inputs 2  
Inputs 3  
2
NOTES: 1. Unless otherwise specified, the absolute maximum negative input voltage is  
limited to the negative power supply.  
Out 3  
Out 2  
8
2. Any amplifier output can be shorted to ground indefinitely. However, if more than  
one amplifier output is shorted simultaneously, maximum junction temperature  
rating may be exceeded.  
(Top View)  
ORDERING INFORMATION  
Operating  
Temperature Range  
Device Function  
Package  
LF351D  
LF351N  
Single  
Single  
SO–8  
Plastic DIP  
LF353D  
LF353N  
Dual  
Dual  
SO–8  
Plastic DIP  
T
= 0° to +70°C  
A
LF347BN  
LF347N  
Quad  
Quad  
Plastic DIP  
Plastic DIP  
Motorola, Inc. 1996  
Rev 0  

LF353DR2 替代型号

型号 品牌 替代类型 描述 数据表
LF353D MOTOROLA

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