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LF353M PDF预览

LF353M

更新时间: 2024-11-22 22:47:11
品牌 Logo 应用领域
美国国家半导体 - NSC 运算放大器放大器电路光电二极管
页数 文件大小 规格书
14页 595K
描述
Wide Bandwidth Dual JFET Input Operational Amplifier

LF353M 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:SOIC包装说明:SOP-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:3.47Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.0002 µA25C 时的最大偏置电流 (IIB):0.0002 µA
最小共模抑制比:70 dB标称共模抑制比:100 dB
频率补偿:YES最大输入失调电流 (IIO):0.004 µA
最大输入失调电压:13000 µVJESD-30 代码:R-PDSO-G8
JESD-609代码:e0长度:4.9 mm
低-偏置:YES低-失调:NO
湿度敏感等级:1负供电电压上限:-18 V
标称负供电电压 (Vsup):-15 V功能数量:2
端子数量:8最高工作温度:70 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):235电源:+-15 V
认证状态:Not Qualified座面最大高度:1.75 mm
最小摆率:8 V/us标称压摆率:13 V/us
子类别:Operational Amplifier最大压摆率:6.5 mA
供电电压上限:18 V标称供电电压 (Vsup):15 V
表面贴装:YES技术:BIPOLAR
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
标称均一增益带宽:4000 kHz最小电压增益:15000
宽度:3.9 mmBase Number Matches:1

LF353M 数据手册

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December 2003  
LF353  
Wide Bandwidth Dual JFET Input Operational Amplifier  
General Description  
Features  
n Internally trimmed offset voltage:  
n Low input bias current:  
n Low input noise voltage:  
n Low input noise current:  
n Wide gain bandwidth:  
n High slew rate:  
10 mV  
50pA  
These devices are low cost, high speed, dual JFET input  
operational amplifiers with an internally trimmed input offset  
voltage (BI-FET II technology). They require low supply  
25 nV/ Hz  
current yet maintain a large gain bandwidth product and fast  
slew rate. In addition, well matched high voltage JFET input  
devices provide very low input bias and offset currents. The  
LF353 is pin compatible with the standard LM1558 allowing  
designers to immediately upgrade the overall performance of  
existing LM1558 and LM358 designs.  
0.01 pA/ Hz  
4 MHz  
13 V/µs  
3.6 mA  
1012  
0.02%  
50 Hz  
2 µs  
n Low supply current:  
n High input impedance:  
n Low total harmonic distortion :  
n Low 1/f noise corner:  
n Fast settling time to 0.01%:  
These amplifiers may be used in applications such as high  
speed integrators, fast D/A converters, sample and hold  
circuits and many other circuits requiring low input offset  
voltage, low input bias current, high input impedance, high  
slew rate and wide bandwidth. The devices also exhibit low  
noise and offset voltage drift.  
Typical Connection  
Connection Diagram  
Dual-In-Line Package  
00564917  
00564914  
Top View  
Order Number LF353M, LF353MX or LF353N  
See NS Package Number M08A or N08E  
Simplified Schematic  
1/2 Dual  
00564916  
BI-FET II is a trademark of National Semiconductor Corporation.  
© 2003 National Semiconductor Corporation  
DS005649  
www.national.com  

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