Datasheet > L2SC1623QLT1G

L2SC1623QLT1G

更新时间： 2024-10-28 02:59:59

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
5页	198K
描述
General Purpose Transistors

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L2SC1623QLT1G 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

FEATURE

L2SC1623*LT1

ƽHigh Voltage: V_CEO= 50 V.

ƽEpitaxial planar type.

ƽPNP complement: L2SA812

ƽPb-Free Package is available.

DEVICE MARKING AND ORDERING INFORMATION

Shipping

Device

Marking

SOT– 23

3000/Tape&Reel

L2SC1623QLT1

(Pb-Free)

3000/Tape&Reel

L2SC1623QLT1G

L2SC1623RLT1

L2SC1623RLT1G

L2SC1623SLT1

L2SC1623SLT1G

COLLECTOR

(Pb-Free)

BASE

(Pb-Free)

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

V_CEO

Collector-Base Voltage

Emitter-Base Voltage

V_CBO

V_EBO

I_C

Collector current-continuoun

150

mAdc

THERMAL CHARATEERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board, (1)

P_D

T_A=25^oC

Derate above 25^oC

225

1.8

mW/^oC

^oC/W

Thermal Resistance, Junction to Ambient

R θJA

556

Total Device Dissipation

P_D

Alumina Substrate, (2) TA=25 ^oC

Derate above 25^oC

300

2.4

mW/^oC

^oC/W

^oC

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

417

R θJA

Tj ,Tstg

-55 to +150

L2SC1623-1/5

12 3 4 5

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