Datasheet > L2SC2411KPLT1G

L2SC2411KPLT1G

更新时间： 2024-10-28 03:49:35

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
4页	83K
描述
Medium Power Transistor NPN silicon

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L2SC2411KPLT1G 数据手册

LESHAN RADIO COMPANY, LTD.

Medium Power Transistor

NPN silicon

L2SC2411K*LT1

FEATURE

ƽEpitaxial planar type

ƽComplementary to L2SA1036K

ƽPb-Free package is available

DEVICE MARKING AND ORDERING INFORMATION

SOT– 23 (TO–236AB)

Device

Marking

Shipping

L2SC2411KPLT1

3000/Tape&Reel

L2SC2411KPLT1G

(Pb-Free)

3000/Tape&Reel

L2SC2411KQLT1

COLLECTOR

L2SC2411KQLT1G

(Pb-Free)

BASE

L2SC2411KRLT1

L2SC2411KRLT1G

(Pb-Free)

EMITTER

MAXIMUM RATINGS (T_A= 25°C)

Parameter

Symbol

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

V_CBO

V_CEO

V_EBO

I_C

0.5

°C

Collector power dissipation

Junction temperature

Storage temperature

P_C

0.2

T_j

150

T_stg

-55~+150

*P_Cmust not be exceeded.

ELECTRICAL CHARACTERISTICS(T_A=25°C)

Parameter

Symbol

Min.

Typ

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltgae

Collector cutoff current

BV_CBO

BV_CEO

BV_EBO

I_CBO

I_C=100µA

I_C=1mA

I_E=100µA

V_CB=20V

µA

Emitter cutoff current

I_EBO

V_EB=4V

DC current transfer ratio

h_FE

390

0.4

V_CE=3V

Collcetor-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C/I_B=500mA/50mA

V_CE=5V,I_E=-20mA,f=100MHz

V_CB=10V,I_E=0A,f=1MHz

250

6.0

MHz

Output capacitance

C_ob

h_FEvalues are classified as follows:

Item

h_FE

82~180

120~270 180~390

L2SC2411K*LT1-1/4

12 3 4

中文翻译

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