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L2SC1623SWT1G_15 PDF预览

L2SC1623SWT1G_15

更新时间: 2024-10-29 01:12:47
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乐山 - LRC /
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描述
General Purpose Transistors

L2SC1623SWT1G_15 数据手册

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LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
Pb-Free package is available  
L2SC1623SWT1G  
DEVICE MARKING AND ORDERING INFORMATION  
Shipping  
Device  
Marking  
3
L2SC1623SWT1G  
L2SC1623SWT3G  
L7  
3000/Tape&Reel  
10000/Tape&Reel  
L7  
1
2
MAXIMUM RATINGS  
Rating  
SC-70  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
VCEO  
50  
V
Collector-Base Voltage  
Emitter-Base Voltage  
VCBO  
VEBO  
IC  
60  
7
V
3
COLLECTOR  
V
1
BASE  
Collector current-continuoun  
150  
mAdc  
THERMAL CHARATEERISTICS  
2
EMITTER  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR-5 Board, (1)  
PD  
TA=25oC  
150  
1.2  
mW  
mW/oC  
oC/W  
Derate above 25oC  
Thermal Resistance, Junction to Ambient  
R qJA  
833  
Total Device Dissipation  
PD  
Alumina Substrate, (2) TA=25 oC  
200  
1.6  
625  
mW  
mW/oC  
oC/W  
oC  
Derate above 25oC  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
RqJA  
Tj ,Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector Cutoff Current (VCB=60V)  
Emitter Cutoff Current (VBE=5V)  
I
I
-
-
0.1  
0.1  
mA  
mA  
CBO  
EBO  
ON CHARACTERISTICS  
DC Current Gain  
C
CE  
(I =1.0mA, V =6V)  
hFE  
-
560  
270  
Collector-Emitter Saturation Voltage  
(IC=100mA,IB=10mA)  
VCE(sat)  
-
0.15  
0.86  
0.62  
0.3  
1.0  
V
V
V
Base-Emitter Saturation Voltage  
(I  
C
=100mA,I  
B
=10mA)  
V
-
BE(sat)  
Base -Emitter On Voltage  
C
CE  
I =1mA,V =6.0V)  
VBE  
0.55  
0.65  
SMALL-SIGNAL CHARACTERISTICS  
Current-Gain-Bandwidth Product  
Ft  
-
-
250  
3
-
-
MHz  
Pf  
CE  
(V =6.0V,IE =-10mA)  
Output Capacitance(VCE = 6V, I  
E
=0, f=1.0MHz)  
Cob  
Rev. O 1/4  

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