Datasheet > L2SC1623SWT1G

L2SC1623SWT1G

更新时间： 2024-10-29 01:12:27

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
4页	313K
描述
General Purpose Transistors

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技术参数
数据手册

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L2SC1623SWT1G 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

L2SC1623SWT1G 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

Pb-Free package is available

L2SC1623SWT1G

DEVICE MARKING AND ORDERING INFORMATION

Shipping

Device

Marking

L2SC1623SWT1G

L2SC1623SWT3G

3000/Tape&Reel

10000/Tape&Reel

MAXIMUM RATINGS

Rating

SC-70

Symbol

Value

Unit

Collector-Emitter Voltage

V_CEO

Collector-Base Voltage

Emitter-Base Voltage

V_CBO

V_EBO

I_C

COLLECTOR

BASE

Collector current-continuoun

150

mAdc

THERMAL CHARATEERISTICS

EMITTER

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board, (1)

P_D

T_A=25^oC

150

1.2

mW/^oC

^oC/W

Derate above 25^oC

Thermal Resistance, Junction to Ambient

R qJA

833

Total Device Dissipation

P_D

Alumina Substrate, (2) TA=25 ^oC

200

1.6

625

mW/^oC

^oC/W

^oC

Derate above 25^oC

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

RqJA

Tj ,Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (T^A=25^oC unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector Cutoff Current (VCB=60V)

Emitter Cutoff Current (VBE=5V)

0.1

CBO

EBO

ON CHARACTERISTICS

DC Current Gain

(I =1.0mA, V =6V)

h^FE

560

270

Collector-Emitter Saturation Voltage

(I_C=100mA,I_B=10mA)

V_CE(sat)

0.15

0.86

0.62

0.3

1.0

Base-Emitter Saturation Voltage

=100mA,I

=10mA)

BE(sat)

Base -Emitter On Voltage

I =1mA,V =6.0V)

V_BE

0.55

0.65

SMALL-SIGNAL CHARACTERISTICS

Current-Gain-Bandwidth Product

F^t

250

MHz

P^f

(V =6.0V,I^E=-10mA)

Output Capacitance(V^CE= 6V, I

=0, f=1.0MHz)

C^ob

Rev. O 1/4

12 3 4

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