Datasheet > KU310N10P_15

KU310N10P_15

更新时间： 2024-11-21 01:16:59

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KEC		/
页数	文件大小	规格书
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描述
N-ch Trench MOS FET

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KU310N10P_15 数据手册

KU310N10P/F

N-ch Trench MOS FET

SEMICONDUCTOR

TECHNICAL DATA

General Description

KU310N10P

This Trench MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for DC/DC Converter,

Synchronous Rectification and a load switch in battery powered

applications

FEATURES

· V_DSS= 100V, I_D= 34A

· Drain-Source ON Resistance :

R_DS(ON)=31mΩ (Max.) @V_GS= 10V

MAXIMUM RATING (Tc=25℃)

RATING

CHARACTERISTIC

SYMBOL

UNIT

KU310N10P KU310N10F

V_DSS

V_GSS

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

100

±20

I_D

Drain Current

@T_C=100℃

21.5

KU310N10F

I_DP

Pulsed (Note1)

110*

Single Pulsed Avalanche Energy

(Note 2)

E_AS

Repetitive Avalanche Energy

(Note 1)

E_AR

2.3

4.5

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

83.3

0.67

W/℃

℃

Tc=25℃

Drain Power

Dissipation

P_D

0.3

Derate above 25℃

T_j

Maximum Junction Temperature

Storage Temperature Range

150

T_stg

-55 ~ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

1.5

3.3

℃/W

Thermal Resistance,

Junction-to-Ambient

62.5

* : Drain current limited by maximum junction temperature.

PIN CONNECTION

2013. 5. 21

Revision No : 2

1/7

12 3 4 5 6 7

中文翻译

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