Datasheet > KU3600N10SZ

KU3600N10SZ

更新时间： 2024-11-21 17:15:23

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
6页	312K
描述
SOT-23

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中文翻译

获取价格

数据手册

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KU3600N10SZ 数据手册

KU3600N10SZ

SEMICONDUCTOR

N CHANNEL TRENCH MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

This Trench MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for LED Lighting and

DC/DC Converters.

DIM MILLIMETERS

2.93 0.20

1.30+0.20/-0.15

1.30 MAX

0.40+0.15/-0.05

2.40+0.30/-0.20

1.90

FEATURES

· V_DSS(Min.)= 100V, I_D= 1.3A

· Drain-Source ON Resistance : R_DS(ON)=0.36 Ω (max) @V_GS=10V

· Qg(typ.) =4.5nC

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

MAXIMUM RATING (T_a=25℃)

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

@T_a=25℃

SYMBOL

V_DSS

RATING

100

UNIT

V_GSS

±18

1.3*

0.8*

5.2*

SOT-23

I_D

@T_a=100℃

Drain Current

I_DP

Pulsed (Note1)

Peak Diode Recovery dv/dt

(Note 2)

dv/dt

4.5

V/ns

T_a=25℃

1.25*

0.01

W/℃

℃

Drain Power

Dissipation

P_D

Derate above25℃

T_j

Maximum Junction Temperature

Storage Temperature Range

Thermal Characteristics

150

T_stg

-55∼ 150

℃

Thermal Resistance, Junction-to-

Ambient

R_thJA

100*

℃/W

* : Surface Mounted on 2" ×"2 FR4 Board 4≤ 10sec.

PIN CONNECTION

2020. 10. 05

Revision No : 2

1/6

12 3 4 5 6

中文翻译

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