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KU3600N10RZ PDF预览

KU3600N10RZ

更新时间: 2024-11-21 17:15:47
品牌 Logo 应用领域
KEC 光电二极管
页数 文件大小 规格书
6页 431K
描述
PDFN33

KU3600N10RZ 数据手册

 浏览型号KU3600N10RZ的Datasheet PDF文件第2页浏览型号KU3600N10RZ的Datasheet PDF文件第3页浏览型号KU3600N10RZ的Datasheet PDF文件第4页浏览型号KU3600N10RZ的Datasheet PDF文件第5页浏览型号KU3600N10RZ的Datasheet PDF文件第6页 
KU3600N10RZ  
SEMICONDUCTOR  
N CHANNEL TRENCH MOS FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
General Description  
A
This Trench MOSFET has better characteristics, such as fast  
switching time, low on resistance, low gate charge and excellent  
avalanche characteristics. It is mainly suitable for LED Lighting and  
DC/DC Converters.  
C
DIM MILLIMETERS  
A
A1  
B
3.15 +0.05/-0.15  
_
2.49 0.1  
+
_
3.35 0.1  
+
_
FEATURES  
B1  
C
3.1 + 0.1  
B1 B  
_
0.75 +0.05  
· VDSS(Min.)= 100V, ID= 5.4A  
C1  
D
0.15+0.1/-0.05  
_
1.88 + 0.1  
· Drain-Source ON Resistance : RDS(ON)=0.36 (max) @VGS =10V  
· Qg(typ.) =2.3nC (@VGS=4.5V)  
G
0.65 Typ.  
G
K
C1  
H
0.39+0.11/-0.09  
A1  
H
D
H2  
H3  
_
H1  
H2  
H3  
K
0.4 0.1  
+
0.13 Typ.  
0.15 Max.  
_
0.3 + 0.05  
MAXIMUM RATING (TC=25)  
CHARACTERISTIC  
Drain-Source Voltage  
Gate-Source Voltage  
TC=25℃  
SYMBOL  
VDSS  
RATING  
100  
UNIT  
V
H1  
VGSS  
V
±16  
5.4  
PDFN33  
ID  
TC=100℃  
3.4  
Drain Current  
A
2.0  
Ta=25℃  
IDP  
Pulsed (Note1)  
9.8  
Peak Diode Recovery dv/dt  
(Note 2)  
dv/dt  
4.5  
V/ns  
TC=25℃  
21.5  
0.17  
W
W/℃  
W
Drain Power  
Dissipation  
PD  
Derate above25℃  
Ta=25℃  
3.1  
Tj  
Maximum Junction Temperature  
Storage Temperature Range  
150  
Tstg  
-55150  
Thermal Characteristics  
RthJC  
RthJA  
Thermal Resistance, Junction-to-Case  
5.8  
/W  
/W  
Thermal Resistance, Junction-to-  
Ambient  
40*  
* : Surface Mounted on 25mm×25mm FR4 Board , t10sec.  
PIN CONNECTION  
1
8
7
6
5
S
S
1
2
3
4
8
7
6
5
D
D
D
D
2
3
4
S
G
2019. 08. 20  
Revision No : 2  
1/6  

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