Datasheet > KU3600N10W

KU3600N10W

更新时间： 2024-11-20 12:03:47

品牌	Logo	应用领域
KEC		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	607K
描述
N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR

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KU3600N10W 数据手册

KU3600N10W

SEMICONDUCTOR

N CHANNEL TRENCH MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

This Trench MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for LED Lighting and

DC/DC Converters.

FEATURES

· V_DSS(Min.)= 100V, I_D= 1.7A

· Drain-Source ON Resistance : R_DS(ON)=0.36 Ω (max) @V_GS=10V

· Qg(typ.) =4.2nC

MAXIMUM RATING (Tc=25℃)

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

SYMBOL

V_DSS

RATING

100

UNIT

V_GSS

±20

1.7*

1.0*

6.4*

I_D

Drain Current

@T_C=100℃

I_DP

Pulsed (Note1)

Single Pulsed Avalanche Energy

(Note 2)

Repetitive Avalanche Energy

(Note 1)

E_AS

12.4

0.1

E_AR

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

4.5

V/ns

T_A=25℃

2.0*

0.016

W/℃

℃

Drain Power

Dissipation

P_D

Derate above25℃

T_j

Maximum Junction Temperature

Storage Temperature Range

Thermal Characteristics

150

T_stg

-55∼ 150

℃

Thermal Resistance, Junction-to-

Ambient

R_thJA

62.5*

℃/W

* : Surface Mounted on FR4 Board (50mm×50mm, 1.0t)

PIN CONNECTION

2011. 4. 7

Revision No : 0

1/6

12 3 4 5 6

中文翻译

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