Datasheet > KU3600N10WZ

KU3600N10WZ

更新时间： 2024-11-21 17:15:43

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
7页	308K
描述
SOT-223

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中文翻译

获取价格

数据手册

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KU3600N10WZ 数据手册

KU3600N10WZ

SEMICONDUCTOR

N CHANNEL TRENCH MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

This Trench MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for LED Lighting and

DC/DC Converters.

FEATURES

· V_DSS(Min.)= 100V, I_D= 1.7A

· Drain-Source ON Resistance : R_DS(ON)=0.36 Ω (max) @V_GS=10V

· Qg(typ.) =4.5nC

DIM

MILLIMETERS

6.5+0.2

3.5+0.2

1.8 MAX

ORDERING INFORMATION

0.7+0.15/-0.1

0.3

FULL NAME

PACKAGE

SOT-223

SUFFIX

2.3 TYP

0.26+0.09/-0.02

KU3600N10WZ-RTK/HD

KU3600N10WZ-RTK/HDH

3.0+0.15/-0.1

1.75+0.25

SOT-223(1) Added code "H" to SOT-223(1)

0.1 MAX

10 MAX

SOT-223

MAXIMUM RATING (Tc=25℃)

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

SYMBOL

V_DSS

RATING

100

UNIT

V_GSS

±18

1.7*

I_D

Drain Current

@T_C=100℃

1.0*

I_DP

Pulsed (Note1)

6.4*

Single Pulsed Avalanche Energy

(Note 2)

Repetitive Avalanche Energy

(Note 1)

E_AS

12.4

0.1

E_AR

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

4.5

V/ns

DIM

MILLIMETERS

T_A=25℃

2.0*

0.016

W/℃

℃

Drain Power

Dissipation

P_D

6.4+0.1

Derate above25℃

3.5+0.2

1.8 MAX

T_j

Maximum Junction Temperature

Storage Temperature Range

150

0.7+0.15/-0.1

6.95 0.2

T_stg

-55∼ 150

℃

2.3 TYP

Thermal Characteristics

Thermal Resistance, Junction-to-

Ambient

0.26+0.09/-0.02

3.0 0.1

1.75+0.25

R_thJA

62.5*

℃/W

0.1 MAX

10 MAX

* : Surface Mounted on FR4 Board (50mm×50mm, 1.0t)

SOT-223(1)

PIN CONNECTION

2019. 03. 26

Revision No : 3

1/6

12 3 4 5 6 7

中文翻译

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