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KU390P02SZ PDF预览

KU390P02SZ

更新时间: 2024-11-21 17:15:55
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
5页 552K
描述
SOT-23

KU390P02SZ 数据手册

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SEMICONDUCTOR  
KU390P02SZ  
TECHNICAL DATA  
P-Ch Trench MOSFET  
General Description  
This Trench MOSFET has better characteristics, such as fast switching  
time, low on resistance and low gate charge. It is mainly suitable for  
portable equipment.  
E
L
B
L
DIM MILLIMETERS  
_
+
A
B
C
D
E
2.93 0.20  
1.30+0.20/-0.15  
1.30 MAX  
0.40+0.15/-0.05  
2.40+0.30/-0.20  
1.90  
FEATURES  
2
Low gate charge and operate at VGS=-1.8V  
VDSS=-24V, ID=-6A  
3
G
H
J
1
0.95  
Drain to Source On-state Resistance.  
RDS(ON)=55m (Max.) @ VGS=-4.5V  
RDS(ON)=72m (Max.) @ VGS=-2.5V  
ESD Protection  
0.13+0.10/-0.05  
0.00 ~ 0.10  
0.55  
K
L
M
N
P
0.20 MIN  
1.00+0.20/-0.10  
7
P
P
M
MAXIMUM RATING (Ta=25  
)
CHARACTERISTIC  
Drain to Source Voltage  
Gate to Source Voltage  
SYMBOL  
VDSS  
VGSS  
ID  
RATING  
UNIT  
V
SOT-23  
-24  
8
V
DC  
(Note 1,2)  
-6  
Drain Current  
A
IDP  
Pulsed (Note 1,3)  
-24  
0.1s  
2
t
PD  
Drain Power Dissipation  
(Note 2)  
W
Steady State  
150  
0.6  
Tj  
Maximum Junction Temperature  
Storage Temperature Range  
Tstg  
-55 150  
62.5  
205  
t
0.1s  
/W  
/W  
Thermal Resistance Junction  
RthJA  
to Ambient  
(Note 2)  
Steady State  
Note 1) Max. current is limited by junction temperature.  
Note 2) Surface mounted on 1 in2 FR-4 board with 2oz.  
Note 3) Pulse test. (pulse width 300 , duty cycle 2%)  
SP1  
PIN CONNECTION (TOP VIEW)  
D
3
3
2
1
2
1
G
S
2020.  
.
Revision No :  
1/5  

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