Datasheet > KU3600DN10RZ

KU3600DN10RZ

更新时间： 2024-11-07 17:15:19

品牌	Logo	应用领域
KEC		光电二极管
页数	文件大小	规格书
6页	511K
描述
PDFN33D

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中文翻译

获取价格

数据手册

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KU3600DN10RZ 数据手册

KU3600DN10RZ

SEMICONDUCTOR

N CHANNEL TRENCH MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

This Trench MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for LED Lighting and

DC/DC Converters.

DIM MILLIMETERS

3.15 +0.05/-0.15

B1 B

2.49 0.1

FEATURES

3.35 0.1

· V_DSS(Min.)= 100V, I_D= 4.7A

3.1 + 0.1

0.75 +0.05

· Drain-Source ON Resistance : R_DS(ON)=0.36 Ω (max) @V_GS=10V

· Q_g(typ.) =2.3nC(@V_GS=4.5V)

0.15+0.1/-0.05

1.88 + 0.1

0.65 Typ.

0.39+0.11/-0.09

0.4 0.1

0.13 Typ.

0.15 Max.

MAXIMUM RATING (T_C=25℃)

0.3 + 0.05

0.3 Min.

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

T_C=25℃

SYMBOL

V_DSS

RATING

100

UNIT

V_GSS

±16

4.7

PDFN33D

I_D

T_C=100℃

3.0

Drain Current

1.7

Ta=25℃

I_DP

Pulsed (Note1)

9.8

Peak Diode Recovery dv/dt

(Note 2)

dv/dt

4.5

V/ns

T_C=25℃

16.6

0.13

W/℃

Drain Power

Dissipation

P_D

Derate above25℃

Ta=25℃

2.3

T_j

Maximum Junction Temperature

Storage Temperature Range

150

℃

T_stg

-55∼ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

7.5

℃/W

Thermal Resistance, Junction-to-

Ambient

55*

* : Surface Mounted on 25mm×25mm FR4 Board , t≤ 10sec.

PIN CONNECTION

2019. 08. 22

Revision No : 1

1/6

12 3 4 5 6

中文翻译

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