Datasheet > KU3600DN10CZ

KU3600DN10CZ

更新时间： 2024-11-21 17:15:27

品牌	Logo	应用领域
KEC		光电二极管
页数	文件大小	规格书
7页	189K
描述
PDFN56D/PDFN56D(1)

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中文翻译

获取价格

数据手册

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KU3600DN10CZ 数据手册

KU3600DN10CZ

SEMICONDUCTOR

N CHANNEL TRENCH MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

This Trench MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for LED Lighting and

DC/DC Converters.

FEATURES

DIM MILLIMETERS

• V_DSS(Min.)= 100V, I_D= 4.7A

4.9 + 0.1

3.81+0.15/-0.2

• Drain-Source ON Resistance : R_DS(ON)=0.36 (max) @V_GS=10V

6.0 + 0.1

5.75 0.1

• Q_g(typ.) =2.3nC(@V_GS=4.5V)

1.0 + 0.1

0.25 + 0.05

ORDERING INFORMATION

3.58 + 0.20

1.1 Min.

0.5 Min.

1.27 Typ.

FULL NAME

PACKAGE

PDFN56D

SUFFIX

KU3600DN10CZ-EL/H

0.51 0.1

0.61 0.1

KU3600DN10CZ-EL/HG PDFN56D(1) Added code “G” to PDFN56D(1)

0.13 0.07

0.41+0.1/-0.08

MAXIMUM RATING (T_C=25℃)

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

T_C=25℃

SYMBOL

V_DSS

RATING

100

UNIT

V_GSS

4.7

3.0

1.8

9.8

PDFN56D

I_D

T_C=100℃

Drain Current

Ta =25℃

I_DP

Pulsed (Note 1)

DIM MILLIMETERS

Peak Diode Recovery dv/dt

(Note 2)

dv/dt

4.5

V/ns

4.9 + 0.2

3.81 + 0.2

1.7 Typ.

T_C=25℃

16.5

0.13

W/℃

6.1 + 0.2

Drain Power

Dissipation

5.8 0.2

P_D

Derate above25℃

Ta =25℃

B1 B

1.0 + 0.1

0.25 + 0.1

2.5

3.5 Typ.

2.55 Typ.

0.65 Typ.

T_j

Maximum Junction Temperature

Storage Temperature Range

150

℃

1.27 0.1

T_stg

-55 ~150

℃

0.63 Typ.

0.63 0.1

Thermal Characteristics

0.15 0.1

0.41 0.1

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

7.6

℃/W

0.3 0.1

0.15 0.1

Thermal Resistance, Junction-to-

Ambient

50*

* : Surface Mounted on 25mm 25mm FR4 Board , t < 10sec.

PDFN56D(1)

PIN CONNECTION

2022. 04. 15

Revision No : 3

1/7

12 3 4 5 6 7

中文翻译

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