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KTC3880S PDF预览

KTC3880S

更新时间: 2024-09-26 11:32:15
品牌 Logo 应用领域
KEC 晶体晶体管光电二极管放大器局域网
页数 文件大小 规格书
6页 429K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

KTC3880S 技术参数

生命周期:Not Recommended零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.71
其他特性:LOW NOISE最大集电极电流 (IC):0.02 A
集电极-发射极最大电压:30 V配置:SINGLE
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):550 MHzBase Number Matches:1

KTC3880S 数据手册

 浏览型号KTC3880S的Datasheet PDF文件第2页浏览型号KTC3880S的Datasheet PDF文件第3页浏览型号KTC3880S的Datasheet PDF文件第4页浏览型号KTC3880S的Datasheet PDF文件第5页浏览型号KTC3880S的Datasheet PDF文件第6页 
SEMICONDUCTOR  
KTC3880S  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.  
VHF BAND AMPLIFIER APPLICATION.  
E
L
B
L
FEATURES  
DIM MILLIMETERS  
Small Reverse Transfer Capacitance  
: Cre=0.7pF(Typ.)  
_
+
2.93 0.20  
A
B
C
D
E
G
H
J
1.30+0.20/-0.15  
1.30 MAX  
0.45+0.15/-0.05  
2.40+0.30/-0.20  
1.90  
2
3
Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).  
1
0.95  
0.13+0.10/-0.05  
0.00 ~ 0.10  
0.55  
K
L
P
P
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
M
N
P
0.20 MIN  
1.00+0.20/-0.10  
7
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
30  
M
V
1. EMITTER  
2. BASE  
4
V
3. COLLECTOR  
Collector Current  
20  
mA  
mA  
mW  
IE  
Emitter Current  
-20  
PC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
150  
150  
-55 150  
SOT-23  
Tj  
Tstg  
Marking  
h
Rank  
FE  
Lot No.  
Type Name  
AQ  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
A
VCB=18V, IE=0  
-
-
-
-
0.5  
0.5  
200  
-
IEBO  
VEB=4V, IC=0  
Emitter Cut-off Current  
DC Current Gain  
A
hFE (Note)  
Cre  
VCE=6V, IC=1mA  
40  
-
-
VCB=6V, f=1MHz, IE=0  
VCE=6V, IC=1mA  
Reverse Transfer Capacitance  
Transition Frequency  
Collector-Base Time Constant  
Noise Figure  
0.7  
550  
-
pF  
MHz  
pS  
fT  
300  
-
-
CC rbb'  
NF  
30  
5.0  
-
VCB=6V, IE=-1mA, f=30MHz  
-
2.5  
18  
VCC=6V, IE=-1mA, f=100MHz (Fig.)  
dB  
Gpe  
Power Gain  
15  
Note : hFE Classification  
R:40 80, O:70 140, Y:100 200  
Revision No : 5  
2003. 6. 20  
1/6  

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