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KTC4075 PDF预览

KTC4075

更新时间: 2024-11-21 17:15:55
品牌 Logo 应用领域
浩畅 - HC /
页数 文件大小 规格书
4页 1135K
描述
SOT-23

KTC4075 数据手册

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SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD.  
SOT-23 Plastic-Encapsulate Transistors  
SOT-23  
KTC4075 TRANSISTOR (NPN)  
FEATURES  
1. BASE  
2. EMITTER  
3. COLLECTOR  
z
z
z
z
Excellent hFE linearity  
High hFE  
Low Noise  
Complementary to KTA2014  
MAXIMUM RATINGS(TA=25unless otherwise noted)  
Symbol Para  
meter  
Value  
60  
Units  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
50  
V
Collector-Emitter Voltage  
5
V
Emitter-Base Voltage  
Collector Current -Continuous  
150  
100  
150  
-55-150  
mA  
mW  
PC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Pa  
rameter  
Symbol  
Test c onditions  
MIN  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
V(BR)CBO IC = 100μA, IE=0  
60  
50  
5
V
V
V(BR)CEO IC = 1mA, IB=0  
V(BR)EBO  
ICBO  
IEBO  
hFE  
IE= 100μA, IC=0  
V
VCB=60V, IE=0  
0.1  
0.1  
μA  
μA  
VEB=5V, IC=0  
DC current gain  
VCE= 6V, IC=2mA  
70  
80  
700  
0.25  
Collector-emitter saturation voltage  
Transition frequency  
VCEsat  
fT  
IC=100mA, IB= 10mA  
VCE=10V, IC= 1mA  
VCE=10V, IE=0, f=1MHz  
VCE=6V,IE=0.1mA, f=1KHz,RG=10KΩ  
V
MHz  
pF  
Collector output capacitance  
Noise figure  
Cob  
3.5  
10  
NF  
dB  
CLASSIFICATION OF hFE  
Rank  
O
70~140  
LO  
Y
GR  
200~400  
LGR  
BL  
Ra nge  
Ma rking  
120~240  
LY  
350~700  
LBL  
浩畅半导体  
RevKM ay2014  
www.szhaochang.cn  
©2008  
1 of 4  

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