Datasheet > KTC3964

KTC3964

更新时间： 2024-05-23 22:23:19

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
2页	44K
描述
TO-126

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中文翻译

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技术参数
数据手册

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KTC3964 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.75	Base Number Matches：	1

KTC3964 数据手册

SEMICONDUCTOR

KTC3964

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

HIGH CURRENT APPLICATION.

Switching Applications

Solenoid Drive Applications

Temperature Compensated for Audio Amplifier Output Stage

FEATURES

· High DC current gain : h_FE= 500(min) (I_C=400mA)

· Low Collector emitter saturation voltage : V_CE(sat)=0.5V(max)

(I_C=300mA)

DIM MILLIMETERS

8.3 MAX

5.8

· Suffix U : Qualified to AEC-Q101.

ex) KTC3964-U/PU

0.7

Φ3.2 0.1

3.5

11.0 0.3

2.9 MAX

1.0 MAX

1.9 MAX

MAXIMUM RATING (Ta=25℃)

0.75 0.15

15.50 0.5

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

2.3 0.1

0.65 0.15

1.6

3.4 MAX

1. EMITTER

2. COLLECTOR

3. BASE

TO-126

Collector Current

P_C

Collector Power Dissipation

Junction Temperature

1.5

℃

T_j

150

T_stg

Storage Temperature Range

-55∼ 150

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_CB=40V, I_E=0

μA

I_EBO

V_EB=7V, I_C=0

Emitter Cut-off Current

500

V_(BR)CEO

h_FE

I_C=10mA, I_B=0

Collector-Emitter Breakdown Voltage

DC Current Gain

V_CE=1V, I_C=400mA

I_C=300mA, I_B=1mA

V_CE=2V, I_C=100mA

V_CB=10V, I_E=0, f=1MHz

V_CE(sat)

V_BE(sat)

f_T

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

0.3

0.5

1.1

220

MHz

C_ob

Collector Output Capacitance

OUTPUT

t_on

t_stg

t_f

Turn On Time

1.0

3.0

1.2

20μsec

INPUT

Switching

Storage Time

Time

μS

Fall Time

=-I =-1mA,

DUTY CYCLE 1% V_CC=30V

2018. 04. 10

Revision No : 2

1/2

中文翻译

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