KTC3880SR

更新时间： 2024-02-01 01:57:48

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	38K
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中文翻译

获取价格

数据手册

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KTC3880SR 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

1. BASE

KTC3880S TRANSISTOR (NPN)

2. EMITTER

3. COLLECTOR

FEATURES

Power dissipation

2. 4

1. 3

P_CM:

150

mW (Tamb=25℃)

Collector current

I_CM:

Collector-base voltage

V_(BR)CBO

Operating and storage junction temperature range

Unit: mm

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS( Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=100µA, I_E=0

Ic=1mA, I_B=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_E=100µA, I_C=0

µA

V_CB=18V, I_E=0

0.5

200

I_EBO

V_EB=4V, I_C=0

h_FE(1)

DC current gain

V_CE=6V, I_C=1mA

MHz

Transition frequency

f_T

V_CE=6V, I_C=1mA

500

C_ob

Collector output capacitance

Noise figure

_CB=6V, I_E=0, f=1MHz

_CE=6V, I_c=1mA, f=100MHZ

CLASSIFICATION OF h_FE(1)

Rank

Range

40-80

70-140

AQO

100-200

Marking

AQR

AQY

中文翻译

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