Datasheet > KTC4075

KTC4075

更新时间： 2023-12-06 20:07:57

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	519K
描述
SOT-23

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中文翻译

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数据手册

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KTC4075 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

KTC4075 TRANSISTOR (NPN)

FEATURES

1. BASE

2. EMITTER

3. COLLECTOR

Excellent h_FElinearity

High h_FE

Low Noise

Complementary to KTA2014

MAXIMUM RATINGS(T^a=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

150

100

P_C

T_J,T_stg

Operation Junction and Storage Temperature Range

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_(BR)CBOI_C= 100μA, I_E=0

V_(BR)CEOI_C= 1mA, I_B=0

V_(BR)EBO

I_CBO

I_EBO

h_FE

I_E= 100μA, I_C=0

V_CB=60V, I_E=0

0.1

μA

V_EB=5V, I_C=0

DC current gain

V_CE= 6V, I_C=2mA

I_C=100mA, I_B= 10mA

V_CE=10V, I_C= 1mA

V_CE=10V, I_E=0, f=1MHz

700

0.25

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

MHz

Collector output capacitance

Noise figure

C_ob

3.5

V_CE=6V,I_E=0.1mA, f=1KHz,R_G=10KΩ

CLASSIFICATION OF h_FE

Rank

70~140

200~400

LGR

Range

Marking

120~240

350~700

LBL

www.jscj-elec.com

Rev. - 2.0

12 3

中文翻译

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