Datasheet > KTC3200_03

KTC3200_03

更新时间： 2024-09-30 11:32:15

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	58K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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KTC3200_03 数据手册

SEMICONDUCTOR

KTC3200

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

LOW NOISE AUDIO AMPLIFIER APPLICATION.

FEATURES

The KTC3200 is a transistor for low frequency and low noise applications.

This device is designed to ower noise figure in the region of low signal

source impedance, and to lower the pulse noise.

This is recommended for the first stages of equalizer amplifiers.

Low Noise

DIM MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

: NF=4dB(Typ.), Rg=100 , V_CE=6V, I_C=100 A, f=1kHz

: NF=0.5dB(Typ.), Rg=1k , V_CE=6V, I_C=100 A, f=1kHz.

Low Pulse Noise : Low 1/f Noise.

1.00

1.27

0.85

0.45

14.00 +0.50

High DC Current Gain : h_FE=200 700.

0.55 MAX

2.30

High Breakdown Voltage : V_CEO=120V .

0.45 MAX

1.00

Complementary to KTA1268.

1. EMITTER

2. COLLECTOR

3. BASE

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

120

UNIT

TO-92

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

120

100

I_E

Emitter Current

-100

625

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

-55 150

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_CB=120V, I_E=0

100

I_EBO

V_EB=5V, I_C=0

V_(BR)CEO

h_FE(Note)

V_CE(sat)

V_BE

I_C=1mA, I_B=0

Collector-Emitter Breakdown Voltage

DC Current Gain

120

V_CE=6V, I_C=2mA

I_C=10mA, I_B=1mA

V_CE=6V, I_C=2mA

V_CE=6V, I_C=1mA

V_CB=10V, I_E=0, f=1MHz

200

700

0.3

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

0.65

100

3.0

f_T

Transition Frequency

MHz

C_ob

Collector Output Capacitance

6.0

2.0

V_CE=6V, I_C=100 A, f=10Hz, Rg=10k

V_CE=6V, I_C=100 A, f=1kHz, Rg=10k

V_CE=6V, I_C=100 A f=1kHz, Rg=100

Noise Figure

4.0

Note : h_FEClassification GR:200 400, BL:350 700

2003. 1. 15

Revision No : 1

1/2

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与KTC3200_03相关器件

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KTC3200BL	MCC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
KTC3200BL-BP	MCC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
KTC3200-BP	MCC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
KTC3200GR	MCC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
KTC3200GR-BP	MCC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
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