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KTC3203 PDF预览

KTC3203

更新时间: 2024-11-20 12:36:43
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 126K
描述
TRANSISTOR (NPN)

KTC3203 数据手册

  
RoHS  
KTC3203  
KTC3203  
TRANSISTOR (NPN)  
TO-92  
1. EMITTER  
2. COLLECTOR  
3. BASE  
FEATURE  
Power dissipation  
PCM:  
0.625 W (Tamb=25)  
Collector current  
ICM:  
0.8  
35  
A
1 2 3  
Collector-base voltage  
V(BR)CBO  
:
V
Operating and storage junction temperature range  
Tstg:  
TJ:  
-55to +150℃  
150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic= 100µA, IE=0  
MIN  
35  
30  
5
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= 10 mA , IB=0  
IE= 100µA, IC=0  
V
V
VCB= 35V, IE=0  
0.1  
0.1  
320  
µA  
µA  
IEBO  
VEB= 5V, IC=0  
Emitter cut-off current  
hFE(1)  
VCE=1V, IC= 100mA  
VCE=1V, IC= 700mA  
IC= 500 mA, IB= 20mA  
VCE= 1V, IC= 10mA  
100  
35  
DC current gain  
hFE(2)  
VCE(sat)  
VBE  
0.7  
0.8  
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
0.5  
VCE= 5 V, IC= 10mA  
120  
MHz  
Transition frequency  
f T  
CLASSIFICATION OF hFE(1)  
WEJ ELECTRONIC CO.,LTD  
Rank  
O
Y
100-200  
160-320  
Range  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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